Vishay E Type N-Channel Power MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252

RS Stock No.:: 188-4874
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: SIHD2N80AE-GE3
ผู้ผลิต:: Vishay

Vishay E Type N-Channel Power MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252

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RS Stock No.:: 188-4874
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: SIHD2N80AE-GE3
ผู้ผลิต:: Vishay

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	2.9A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.9Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	7nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62.5W
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Width	6.22mm
	Standards/Approvals	RoHS
	Height	2.25mm
	Automotive Standard	No

	เลือกทั้งหมด
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 2.9A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.9Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 7nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62.5W
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Width 6.22mm
	Standards/Approvals RoHS
	Height 2.25mm
	Automotive Standard No

Datasheet SIHD2N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 2.9A Maximum Continuous Drain Current - SIHD2N80AE-GE3

This power MOSFET is a high-voltage switching transistor intended for use in industrial and electronics systems where robust voltage handling and thermal endurance are required. It operates as an enhancement-mode N-channel device designed for surface-mount installation and is suited to power conversion and control tasks in automation and electrical equipment.

Features and Benefits:

• 800V rating enables high-voltage switching in Compact designs • 2.9A continuous drain current supports moderate load currents • 7nC typical gate charge for efficient gate-drive energy management • 2.9Ω Rds(on) limits conduction losses under light-to-moderate loads • 62.5W power dissipation allows sustained thermal loading • -55°C to 150°C operating range for elevated-temperature applications

Applications

• Suitable for high-voltage rail switching in industrial converters • Ideal for power-stage use in motor drives with moderate currents • Used for line-side switching in power supplies and inverters • Can be used for transient suppression and snubber circuits in AC systems

What gate voltage range should I observe for control circuitry?

The device tolerates gate-source voltages up to 30V, so gate drivers should be specified to remain within this maximum to prevent gate degradation.

How does mounting affect thermal performance?

As a surface-mounted TO-252 package, thermal transfer relies on good PCB copper area and thermal vias to dissipate the device’s rated power

insufficient copper will raise junction temperature.

What package pin count and configuration are provided?

The component is supplied in a three-pin TO-252 configuration suitable for standard surface-mount assembly processes.

How should I account for forward conduction behaviour in design?

The reported forward voltage is 1.2V

include this in loss calculations when the body diode conducts during reverse-recovery or synchronous-rectification events.