Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3
- RS Stock No.:
- 210-4986
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SIHG17N80AE-GE3
- ผู้ผลิต:
- Vishay
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
มีส่วนลดเมื่อซื้อจำนวนมาก
ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย (1 แพ็ค แพ็คละ 5 ชิ้น)*
THB643.21
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB688.235
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- 1,475 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 5 - 5 | THB128.642 | THB643.21 |
| 10 - 10 | THB125.426 | THB627.13 |
| 15 + | THB123.494 | THB617.47 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 210-4986
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SIHG17N80AE-GE3
- ผู้ผลิต:
- Vishay
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247AC | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Width | 15.66mm | |
| Standards/Approvals | RoHS | |
| Length | 35.3mm | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247AC | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Width 15.66mm | ||
Standards/Approvals RoHS | ||
Length 35.3mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 15A Maximum Continuous Drain Current - SIHG17N80AE-GE3
This power MOSFET is a high-voltage switching transistor designed for demanding power-conversion environments. It operates as an enhancement-mode N-channel device and is intended for through-hole mounting in applications requiring robust high-voltage handling and significant continuous current capability. The component meets RoHS requirements and functions across a wide ambient temperature range.
Features and Benefits:
• 800V drain-source rating enables high-voltage system operation
• 15A continuous drain current supports substantial load currents
• 250mΩ RDS(on) yields reduced conduction losses under load
• 179W maximum power dissipation allows high-power switching
• 41nC typical gate charge facilitates predictable switching behaviour
• 30V maximum gate-source tolerance protects against gate overdrive
• 15A continuous drain current supports substantial load currents
• 250mΩ RDS(on) yields reduced conduction losses under load
• 179W maximum power dissipation allows high-power switching
• 41nC typical gate charge facilitates predictable switching behaviour
• 30V maximum gate-source tolerance protects against gate overdrive
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power electronics designs
• Used with flyback and boost converter topologies
• Can be used for industrial motor-drive switch stages
• Suitable for high-voltage laboratory and test equipment
• Ideal for switch-mode power electronics designs
• Used with flyback and boost converter topologies
• Can be used for industrial motor-drive switch stages
• Suitable for high-voltage laboratory and test equipment
What temperature range can it tolerate during operation?
It is specified to function from -55°C up to 150°C, enabling use in both cold-start and elevated-heat environments.
Which package type and mounting style does it use?
The device is supplied in a TO-247AC package and is designed for through-hole PCB mounting for secure mechanical and thermal connection.
How does the forward voltage affect conduction?
The forward voltage of 1.2V indicates the on-state voltage drop under conduction conditions, which factors into thermal design and power-loss calculations.
Is it suitable for automotive qualification testing?
It is not designated as automotive standard
suitability for vehicle use should be evaluated against the required automotive specifications.
ลิงก์ที่เกี่ยวข้อง
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-247AC SIHG20N50E-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 SIHP17N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB SIHP15N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3
