Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SC-88
- RS Stock No.:
- 827-0115
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSD235NH6327XTSA1
- ผู้ผลิต:
- Infineon
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
มีส่วนลดเมื่อซื้อจำนวนมาก
ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย (1 รีล รีลละ 250 ชิ้น)*
THB1,633.50
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB1,747.75
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- 8,000 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย | ต่อม้วน* |
|---|---|---|
| 250 - 500 | THB6.534 | THB1,633.50 |
| 750 - 1250 | THB6.371 | THB1,592.75 |
| 1500 + | THB6.273 | THB1,568.25 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 827-0115
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSD235NH6327XTSA1
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 0.32nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 0.32nC | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 600mΩ Maximum Drain Source Resistance - BSD235NH6327XTSA1
This MOSFET is a compact, surface-mounted N-channel transistor designed for switching and power-management tasks in automotive and industrial environments. It operates as an enhancement-mode device with an isolated transistor configuration and is intended for applications requiring low gate charge switching and thermal endurance at elevated temperatures.
Features and Benefits:
• 20V maximum drain voltage enables safe low-voltage switching
• 600 mΩ RDS(on) reduces conduction losses during operation
• 0.32 nC typical gate charge delivers fast, low-driving-energy switching
• 950 mA continuous drain current supports modest load currents
• 500 mW power dissipation allows sustained operation under load
• AEC‑Q101 qualification suits automotive electronics testing
• 600 mΩ RDS(on) reduces conduction losses during operation
• 0.32 nC typical gate charge delivers fast, low-driving-energy switching
• 950 mA continuous drain current supports modest load currents
• 500 mW power dissipation allows sustained operation under load
• AEC‑Q101 qualification suits automotive electronics testing
Applications
• Suitable for supply-rail switching in automotive modules
• Ideal for load switching in body-control units
• Used for gate drivers and secondary-side power stages
• Can be used for compact power management in ubiquitous SMD designs
• Appropriate for dual-channel switching in sensor interfaces
• Ideal for load switching in body-control units
• Used for gate drivers and secondary-side power stages
• Can be used for compact power management in ubiquitous SMD designs
• Appropriate for dual-channel switching in sensor interfaces
What gate-drive limits should be observed for safe operation?
The device accepts gate-source voltages up to 12V maximum
ensure drive circuits remain within this limit to avoid gate-oxide stress.
How does thermal range affect placement in designs?
It operates between -55 °C and 150 °C, permitting placement near heat‑generating components but still requiring thermal consideration for PCB copper area and airflow to manage 500 mW dissipation.
How many discrete elements are provided on the die?
The chip contains two elements, useful where paired switching channels are needed in a single package.
What physical package constraints influence PCB layout?
The component is supplied in an SC-88 package with six pins, so footprint planning must accommodate the small SMD pin array and clearance for solder fillets.
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