Infineon Isolated OptiMOS 2 2 N-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1
- RS Stock No.:
- 165-5872
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSD235NH6327XTSA1
- ผู้ผลิต:
- Infineon
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
ยอดรวมย่อย (1 รีล รีลละ 3000 ชิ้น)*
THB9,741.00
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB10,422.00
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
- 6,000 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ชิ้น | ต่อหน่วย | ต่อม้วน* |
|---|---|---|
| 3000 - 3000 | THB3.247 | THB9,741.00 |
| 6000 - 9000 | THB3.15 | THB9,450.00 |
| 12000 + | THB3.055 | THB9,165.00 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 165-5872
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSD235NH6327XTSA1
- ผู้ผลิต:
- Infineon
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Maximum Power Dissipation Pd | 500mW | |
| Typical Gate Charge Qg @ Vgs | 0.32nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.25mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Height | 0.8mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Maximum Power Dissipation Pd 500mW | ||
Typical Gate Charge Qg @ Vgs 0.32nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Width 1.25mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Height 0.8mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 600mΩ Maximum Drain Source Resistance - BSD235NH6327XTSA1
Features and Benefits:
• 600 mΩ RDS(on) reduces conduction losses during operation
• 0.32 nC typical gate charge delivers fast, low-driving-energy switching
• 950 mA continuous drain current supports modest load currents
• 500 mW power dissipation allows sustained operation under load
• AEC‑Q101 qualification suits automotive electronics testing
Applications
• Ideal for load switching in body-control units
• Used for gate drivers and secondary-side power stages
• Can be used for compact power management in ubiquitous SMD designs
• Appropriate for dual-channel switching in sensor interfaces
What gate-drive limits should be observed for safe operation?
How does thermal range affect placement in designs?
How many discrete elements are provided on the die?
What physical package constraints influence PCB layout?
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