Infineon Isolated OptiMOS 2 Type P, Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin TSOP
- RS Stock No.:
- 166-1086
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSL215CH6327XTSA1
- ผู้ผลิต:
- Infineon
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THB23,655.00
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB25,311.00
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
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- 15,000 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
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ชิ้น | ต่อหน่วย | ต่อม้วน* |
|---|---|---|
| 3000 - 3000 | THB7.885 | THB23,655.00 |
| 6000 - 9000 | THB7.648 | THB22,944.00 |
| 12000 + | THB7.419 | THB22,257.00 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 166-1086
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSL215CH6327XTSA1
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOP | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | 0.8V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOP | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf 0.8V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Infineon OptiMOS Series MOSFET, 20V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSL215CH6327XTSA1
This MOSFET is a compact surface-mounted power transistor device designed for switching and amplification in automotive and industrial contexts. It comprises paired transistor elements in an isolated configuration to support complementary applications where both P‑channel and N‑channel operation is required. The component is tailored for use on printed circuit boards where a small footprint and industry-specific reliability are important.
Features and Benefits:
• Low gate charge of 3 nC enables faster switching performance
• Maximum continuous drain current of 1.5A supports moderate-load circuits
• Drain-source resistance of 280 mΩ reduces conduction losses
• Rated for 20V drain-source voltage for low-voltage systems
• Power dissipation of 500 mW manages thermal load in compact designs
• Qualified to AEC‑Q101 for elevated automotive stress tolerance
• Maximum continuous drain current of 1.5A supports moderate-load circuits
• Drain-source resistance of 280 mΩ reduces conduction losses
• Rated for 20V drain-source voltage for low-voltage systems
• Power dissipation of 500 mW manages thermal load in compact designs
• Qualified to AEC‑Q101 for elevated automotive stress tolerance
Applications
• Suitable for automotive signal switching and control circuits
• Used with battery management and power-distribution modules
• Ideal for compact DC‑DC converters and voltage regulators
• Can be used for load switching in infotainment subsystems
• Appropriate for embedded motor-control driver stages
• Used with battery management and power-distribution modules
• Ideal for compact DC‑DC converters and voltage regulators
• Can be used for load switching in infotainment subsystems
• Appropriate for embedded motor-control driver stages
What temperature range can it operate within reliably?
It functions across -55 °C to 150 °C, enabling use from cold starts to high under‑bonnet temperatures.
How many transistor elements are provided on the chip?
The device contains two elements per chip arranged in an isolated configuration for flexible circuit topologies.
What package and pin count should designers plan for?
It is supplied in a TSOP package with six pins for surface mounting and layout planning.
Which gate‑source and forward voltage limits must be observed?
The maximum gate‑source voltage is 12V and the forward voltage is 0.8V for diode conduction considerations.
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