Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3
- RS Stock No.:
- 812-3108
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SI1967DH-T1-GE3
- ผู้ผลิต:
- Vishay
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
ยอดรวมย่อย (1 ม้วน ม้วนละ 50 ชิ้น)*
THB565.15
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB604.70
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
- 150 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ชิ้น | ต่อหน่วย | ต่อม้วน* |
|---|---|---|
| 50 - 700 | THB11.303 | THB565.15 |
| 750 - 1450 | THB11.021 | THB551.05 |
| 1500 + | THB10.851 | THB542.55 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 812-3108
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SI1967DH-T1-GE3
- ผู้ผลิต:
- Vishay
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 790mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.6nC | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | +150°C | |
| Length | 2.2mm | |
| Width | 1.35mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 790mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.6nC | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature +150°C | ||
Length 2.2mm | ||
Width 1.35mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay TrenchFET Series Power MOSFET, 20V Maximum Drain Source Voltage, 1.1A Maximum Continuous Drain Current - SI1967DH-T1-GE3
Features and Benefits:
• 1.1A continuous drain current supports steady loads
• 790mΩ Rds(on) minimises conduction losses
• 2.6nC typical gate charge allows faster gate transitions
• 1.25W power dissipation copes with moderate thermal stress
Applications
• Ideal for load switching in compact power modules
• Used with level-shifting stages in analogue front-ends
• Can be used for dual-channel switching in tight PCB spaces
What mounting style is required for assembly?
How many active transistor elements does it contain?
What gate voltage limits should designers observe?
What temperature range can it withstand during operation?
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