Infineon HEXFET Type N-Channel MOSFET, 5.3 A, 30 V Enhancement, 3-Pin SOT-23 IRLML0030TRPBF
- RS Stock No.:
- 725-9344
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRLML0030TRPBF
- ผู้ผลิต:
- Infineon
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
ยอดรวมย่อย (1 แพ็ค แพ็คละ 20 ชิ้น)*
THB139.20
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB149.00
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
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ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 20 + | THB6.96 | THB139.20 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 725-9344
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRLML0030TRPBF
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.6nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-45-309 | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.6nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.3W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-45-309 | ||
Infineon HEXFET Series MOSFET, 5.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML0030TRPBF
This MOSFET is designed to deliver efficient switching for electronic circuits across various industrial applications. Its enhancement mode FET configuration ensures optimal performance for load or system switching tasks. As a key component in the automation and electronics sectors, it offers versatility and high dependability, making it a fundamental selection for engineers.
Features & Benefits
• 5.3A continuous drain current extends operational capability
• 30V maximum drain-source voltage supports rigorous applications
• Low Rds(on) of 27 mΩ minimises energy losses during operation
• Compatible with surface mount technology for straightforward integration
• High-temperature rating of +150 °C maintains performance in challenging environments
• RoHS compliant, promoting eco-friendly design and manufacturing
Applications
• Utilised in microcontroller interfacing for load management
• Suitable for automotive electronics for switch control
• Employed in power supply circuits for efficient current handling
• Ideal for consumer electronics requiring compact power solutions
• Applied in automation systems for consistent control operations
How does the gate threshold voltage affect switching behaviour?
The gate threshold voltage specifies the minimum gate-to-source voltage required to activate the device, influencing its switching speed and operational efficiency.
What considerations should be taken during installation regarding thermal management?
Proper heat dissipation must be ensured as the maximum operating temperature is +150 °C, crucial for sustaining performance and safety.
Can it be integrated with existing circuits designed for other technologies?
Yes, it features an industry-standard pinout, ensuring compatibility with various existing surface mount techniques.
What are the implications of the maximum gate-source voltage rating?
The voltage rating of ±20 V must be observed to avoid gate damage and ensure stable operation within specified limits.
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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