Infineon HEXFET Type N-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 913-4073
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRLML6344TRPBF
- ผู้ผลิต:
- Infineon
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
มีส่วนลดเมื่อซื้อจำนวนมาก
ยอดรวมย่อย (1 รีล รีลละ 3000 ชิ้น)*
THB10,716.00
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB11,466.00
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- 45,000 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย | ต่อม้วน* |
|---|---|---|
| 3000 - 3000 | THB3.572 | THB10,716.00 |
| 6000 - 9000 | THB3.465 | THB10,395.00 |
| 12000 + | THB3.361 | THB10,083.00 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 913-4073
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRLML6344TRPBF
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Infineon HEXFET Series MOSFET, 5A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML6344TRPBF
This MOSFET is a high-performance N-channel surface mount device suitable for various applications in the electronics and automation sectors. Designed with a compact SOT-23 package, it measures 3.04mm in length, 1.4mm in width, and 1.02mm in height. It exhibits excellent thermal performance, with an operating temperature range of -55°C to +150°C.
Features & Benefits
• Offers a continuous drain current of 5A for robust performance
• Maximum drain-source voltage of 30V supports various requirements
• Low RDS(on) of 29mΩ at VGS = 4.5V reduces power losses
• Wide gate threshold voltage range enables flexible operation
• Efficient power dissipation capability of 1.3W enhances reliability
Applications
• Ideal for microcontroller load switching in electronic systems
• Used in power management solutions for automotive
• Effective in DC-DC converters for efficient energy conversion
• Suitable for battery management systems to improve performance
• Effective in motor control circuits for automation tasks
What is the significance of the low RDS(on) value?
The low RDS(on) value indicates lower conduction losses, which translates to better efficiency, especially in high-current applications. This characteristic is essential for reducing heat generation in power electronics.
What voltage range can be applied to the gate-source junction?
The maximum gate-source voltage is ±12V, allowing flexibility in driving conditions while ensuring device integrity within rated limits.
How does the device perform under high temperatures?
With a maximum operating temperature of +150°C, the MOSFET is built to withstand harsh environments, ensuring reliable functionality in demanding applications.
What benefits does the surface mount design provide?
The SOT-23 surface mount design allows for compact circuit layouts and enhances thermal management, making it ideal for modern electronic assemblies.
ลิงก์ที่เกี่ยวข้อง
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