Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual
- RS Stock No.:
- 228-2925
- Mfr. Part No.:
- SiS590DN-T1-GE3
- Brand:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
THB250.57
(exc. VAT)
THB268.11
(inc. VAT)
ส่งฟรีหากซื้อเกิน ฿2,500.00
กำลังจะเลิกผลิต
- 5,920 ชิ้นสุดท้ายพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | THB25.057 | THB250.57 |
| 50 - 90 | THB24.43 | THB244.30 |
| 100 - 240 | THB23.819 | THB238.19 |
| 250 - 990 | THB23.223 | THB232.23 |
| 1000 + | THB22.643 | THB226.43 |
*price indicative
- RS Stock No.:
- 228-2925
- Mfr. Part No.:
- SiS590DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212-8 Dual | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.251Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 23.1W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212-8 Dual | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.251Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 23.1W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Combo N- & P-Channel -100 V MOSFET.
100 % Rg and UIS tested
Related links
- Vishay Dual TrenchFET 2 Type P 4 A 8-Pin PowerPAK 1212-8 Dual
- Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212
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- Vishay Dual TrenchFET 2 Type P 4 A 8-Pin TSOP SI5515CDC-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SC-70
- Vishay Single TrenchFET Type P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8
- Vishay TrenchFET Type P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8
- Vishay TrenchFET Type P-Channel MOSFET 200 V, 8-Pin PowerPAK 1212-8