Vishay E Type N-Channel Power MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252

RS Stock No.:: 228-2851
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: SiHD5N80AE-GE3
ผู้ผลิต:: Vishay

Vishay E Type N-Channel Power MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

ยอดรวมย่อย (1 รีล รีลละ 3000 ชิ้น)*

THB56,088.00

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB60,015.00

(รวมภาษีมูลค่าเพิ่ม)

ไม่สามารถเข้าถึงข้อมูลสต็อกได้ในขณะนี้ - โปรดกลับมาตรวจสอบอีกครั้งภายหลัง

ชิ้น	ต่อหน่วย	ต่อม้วน*
3000 +	THB18.696	THB56,088.00

*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 228-2851
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: SiHD5N80AE-GE3
ผู้ผลิต:: Vishay

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	4.4A
	Maximum Drain Source Voltage Vds	850V
	Package Type	TO-252
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.35Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	11nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62.5W
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	เลือกทั้งหมด
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 4.4A
	Maximum Drain Source Voltage Vds 850V
	Package Type TO-252
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.35Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 11nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62.5W
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SiHD5N80AE-GE3

Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 4.4A Maximum Continuous Drain Current - SiHD5N80AE-GE3

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-conversion tasks in industrial electronics. It is supplied in a Compact surface-mount TO-252 package and is suited to applications that demand robust voltage handling and moderate continuous current capability in a small footprint.

Features and Benefits:

• 850V drain tolerance enables high-voltage system integration • 4.4A continuous drain current supports moderate load switching • 1.35Ω Rds(on) reduces conduction losses under load • 11nC typical gate charge allows efficient gate-drive design • 62.5W power dissipation manages thermal loading in Compact layouts • 150°C maximum junction temperature sustains high-temperature operation

Applications

• Suitable for SMPS and converters in industrial control systems • Ideal for flyback and boost topologies in power supplies • Used for line-side switching in LED drivers and lighting controls • Can be used for high-voltage pre-regulation stages in battery chargers

What gate-drive limits should be observed for safe operation?

The gate-source voltage must not exceed 30V to avoid gate-dielectric stress during switching transitions.

How does thermal margin affect PCB layout choices?

With a 62.5W dissipation rating and high junction capability, designers should provide adequate copper area or thermal vias to remove heat from the TO-252 land pattern.

Is this device suitable for automotive systems?

It is not specified for automotive-standard use and should not be selected where automotive qualification is mandatory.

What switching trade-offs arise from the gate-charge figure?

The 11nC gate charge balances switching speed and drive energy, requiring gate drivers sized for the desired rise/fall times and switching frequency.