Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3
- RS Stock No.:
- 228-2840
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SiHA5N80AE-GE3
- ผู้ผลิต:
- Vishay
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
มีส่วนลดเมื่อซื้อจำนวนมาก
ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย (1 แพ็ค แพ็คละ 5 ชิ้น)*
THB230.11
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB246.22
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- 855 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 5 - 5 | THB46.022 | THB230.11 |
| 10 - 20 | THB44.87 | THB224.35 |
| 25 - 95 | THB43.748 | THB218.74 |
| 100 - 495 | THB42.654 | THB213.27 |
| 500 + | THB41.586 | THB207.93 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 228-2840
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SiHA5N80AE-GE3
- ผู้ผลิต:
- Vishay
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 29W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 29W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Drain‑Source Voltage, 3A Maximum Continuous Drain Current - SiHA5N80AE-GE3
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in industrial electronic systems. Supplied in a TO-220 through-hole package with three connections, it suits applications requiring discrete mounting and thermal management. The component operates across a wide temperature range and is constructed to meet RoHS standards.
Features and Benefits:
• 850V maximum drain voltage enables high-voltage switching
• 3A continuous drain current supports moderate load currents
• 1.35Ω drain-source resistance reduces conduction losses
• 29W power dissipation allows sustained thermal loading
• 11nC typical gate charge improves switching efficiency
• ±30V gate-source tolerance protects gate-drive flexibility
• 3A continuous drain current supports moderate load currents
• 1.35Ω drain-source resistance reduces conduction losses
• 29W power dissipation allows sustained thermal loading
• 11nC typical gate charge improves switching efficiency
• ±30V gate-source tolerance protects gate-drive flexibility
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor-drive front-ends with discrete components
• Used for lighting ballast control in high-voltage systems
• Can be used for inverter-stage switching in power conversion
• Ideal for industrial motor-drive front-ends with discrete components
• Used for lighting ballast control in high-voltage systems
• Can be used for inverter-stage switching in power conversion
What temperature range can it withstand during operation?
It is rated to operate down to -55°C and up to 150°C, permitting use in environments with wide thermal variation.
How does the package choice affect thermal management?
The TO-220 package offers a metal tab suitable for heatsinking, allowing improved heat extraction when mounted to an external cooler.
What gate-drive considerations are necessary for this device?
The gate should be driven within ±30V limits and sized to accommodate an 11nC typical gate charge to ensure reliable switching performance.
Is the device compliant with environmental substance restrictions?
It conforms to RoHS requirements, indicating restriction of certain hazardous substances in its construction.
ลิงก์ที่เกี่ยวข้อง
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247 SIHG21N80AEF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHP6N80AE-GE3
