STMicroelectronics Sct N channel-Channel Power MOSFET, 60 A, 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- RS Stock No.:
- 719-466
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SCT018HU65G3AG
- ผู้ผลิต:
- STMicroelectronics
N
มีส่วนลดเมื่อซื้อจำนวนมาก
ยอดรวมย่อย (1 ชิ้น)*
THB615.88
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB658.99
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
ไม่สามารถเข้าถึงข้อมูลสต็อกได้ในขณะนี้
ชิ้น | ต่อหน่วย |
|---|---|
| 1 - 4 | THB615.88 |
| 5 + | THB597.56 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 719-466
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SCT018HU65G3AG
- ผู้ผลิต:
- STMicroelectronics
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | Sct | |
| Package Type | HU3PAK | |
| Mount Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 21.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 79.4nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 388W | |
| Maximum Operating Temperature | 175°C | |
| Width | 14.1 mm | |
| Length | 19mm | |
| Height | 3.6mm | |
| Automotive Standard | AEC-Q101 | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series Sct | ||
Package Type HU3PAK | ||
Mount Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 21.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 79.4nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 388W | ||
Maximum Operating Temperature 175°C | ||
Width 14.1 mm | ||
Length 19mm | ||
Height 3.6mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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