STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4
- RS Stock No.:
- 719-470
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SCT025W120G3-4
- ผู้ผลิต:
- STMicroelectronics
N
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- RS Stock No.:
- 719-470
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SCT025W120G3-4
- ผู้ผลิต:
- STMicroelectronics
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | Sct | |
| Package Type | Hip-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 388W | |
| Forward Voltage Vf | 2.7V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 25.27mm | |
| Width | 5.1 mm | |
| Length | 15.9mm | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series Sct | ||
Package Type Hip-247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 388W | ||
Forward Voltage Vf 2.7V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Height 25.27mm | ||
Width 5.1 mm | ||
Length 15.9mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability (TJ equal to 200 °C)
Source sensing pin for increased efficiency