STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 750 V, 7-Pin HU3PAK SCT060HU75G3AG
- RS Stock No.:
- 215-239
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SCT060HU75G3AG
- ผู้ผลิต:
- STMicroelectronics
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- RS Stock No.:
- 215-239
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SCT060HU75G3AG
- ผู้ผลิต:
- STMicroelectronics
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 750 V | |
| Package Type | HU3PAK | |
| Series | SCT | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 750 V | ||
Package Type HU3PAK | ||
Series SCT | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Very fast and robust intrinsic body diode
ลิงก์ที่เกี่ยวข้อง
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