Vishay IRF510 N-Channel Power MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-220AB IRF510PBF
- RS Stock No.:
- 919-0023
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF510PBF
- ผู้ผลิต:
- Vishay
มีส่วนลดเมื่อซื้อจำนวนมาก
ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย (1 หลอด หลอดละ 50 ชิ้น)*
THB1,412.50
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB1,511.50
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- เพิ่มอีก 300 ชิ้นจะส่งได้หลังจากวันที่ 12 ตุลาคม 2569 ไปอีกประมาณ 7 วันทำการ
- เพิ่มอีก 2,600 ชิ้นจะส่งได้หลังจากวันที่ 19 ตุลาคม 2569 ไปอีกประมาณ 7 วันทำการ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย | ต่อหลอด* |
|---|---|---|
| 50 - 50 | THB28.25 | THB1,412.50 |
| 100 - 150 | THB27.402 | THB1,370.10 |
| 200 + | THB26.58 | THB1,329.00 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 919-0023
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF510PBF
- ผู้ผลิต:
- Vishay
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRF510 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 540mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 2.5V | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRF510 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 540mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 2.5V | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Length 10.41mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRF510 Series Power MOSFET, 100V Maximum Drain Source Voltage, 43W Maximum Power Dissipation - IRF510PBF
This power MOSFET is a single N-channel enhancement device designed for switching and amplification tasks in through‑hole assemblies. It operates across a wide temperature span suitable for demanding environments and accepts standard gate‑drive levels to control medium‑power loads. The component is supplied in a TO‑220AB package for straightforward mounting and thermal interfacing on heatsinks.
Features and Benefits:
• 100V drain voltage supports high‑voltage switching applications
• 5.6A continuous drain current handles moderate load currents
• 540mΩ Rds(on) reduces conduction losses for efficient switching
• 43W power dissipation enables sustained power handling with cooling
• 8.3nC typical gate charge allows reasonably fast switching response
• ±20V gate tolerance accommodates common gate‑drive ranges
• 5.6A continuous drain current handles moderate load currents
• 540mΩ Rds(on) reduces conduction losses for efficient switching
• 43W power dissipation enables sustained power handling with cooling
• 8.3nC typical gate charge allows reasonably fast switching response
• ±20V gate tolerance accommodates common gate‑drive ranges
Applications
• Suitable for amplifier circuit output stages in audio designs
• Ideal for general‑purpose switching in power supplies
• Used with heatsinks for motor control and power conversion
• Can be used for educational and prototyping through‑hole projects
• Useful as a transistor replacement part in repair work
• Ideal for general‑purpose switching in power supplies
• Used with heatsinks for motor control and power conversion
• Can be used for educational and prototyping through‑hole projects
• Useful as a transistor replacement part in repair work
What ambient temperatures can the device withstand in operation?
It is specified to function from -55°C up to 175°C junction temperature for use in high‑temperature assemblies.
How many pins does the component present for PCB mounting?
The device is provided with three pins configured for through‑hole mounting in a TO‑220AB footprint.
What package form factor should I prepare a heatsink for?
The TO‑220AB enclosure offers a flat rear tab suitable for bolting to a heatsink to improve thermal dissipation.
Is the component suitable for automotive‑standard requirements?
The device is not specified to meet automotive approval standards and should not be assumed compliant for regulated vehicle use.
ลิงก์ที่เกี่ยวข้อง
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