N-Channel MOSFET, 250 A, 40 V, 3-Pin D2PAK Infineon IRFS7437TRLPBF

RS Stock No.:: 872-4206
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRFS7437TRLPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel MOSFET, 250 A, 40 V, 3-Pin D2PAK Infineon IRFS7437TRLPBF

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

มีส่วนลดเมื่อซื้อจำนวนมาก

ราคา / Price Each: (In a Pack of 10)**

THB46.022

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB49.244

(รวมภาษีมูลค่าเพิ่ม)

2510 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)*

* วันที่จัดส่งอาจเปลี่ยนแปลงได้ตามจำนวนสินค้าที่คุณเลือกหรือที่อยู่จัดส่งของคุณ

ฟรี ค่าจัดส่งสำหรับการสั่งซื้อมากกว่า THB3,500.00 (ไม่รวมภาษี)

ชิ้น	ต่อหน่วย	ต่อแพ็ค**
10 - 190	THB46.022	THB460.22
200 - 390	THB44.871	THB448.71
400 +	THB44.18	THB441.80

**ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 872-4206
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRFS7437TRLPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 250A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRFS7437TRLPBF

This MOSFET is intended for high-performance applications that require efficient power management. It is utilised across various sectors and offers robust features suitable for challenging environments. Its ability to manage high current and voltage levels makes it well-suited for advanced technology applications.

Features & Benefits

• Supports a maximum continuous drain current of 250A for high-power applications
• Offers a maximum drain-source voltage of 40V, ensuring reliability in different setups
• Exhibits low Rds(on) of 1.4mΩ, contributing to reduced power losses
• Designed for surface mounting, simplifying installation
• Capable of handling rapid switching applications, which enhances efficiency

Applications

• Suitable for brushed motor drive
• Ideal for battery-powered circuits, enabling efficient power usage
• Employed in half-bridge and full-bridge topologies for precise control
• Utilised in synchronous rectifier to enhance energy savings
• Applicable in resonant mode power supplies for stable performance

How is the power dissipation managed during operation?

Power dissipation is managed through a maximum rating of 230W, ensuring thermal stability under high load conditions.

What is the significance of the low Rds(on) value?

The low Rds(on) value minimises energy loss during operation, improving efficiency in high-current applications.

Can this be used in high-temperature environments?

With an operating temperature range of -55°C to +175°C, it is suitable for diverse applications, including high-temperature environments.

What installation considerations should I be aware of?

Ensure proper thermal management as per specifications to maintain operational efficiency and reliability during intense applications.

Is it compatible with various power supply designs?

Yes, the MOSFET is versatile and can be integrated into numerous power supply designs, providing adaptability across different projects.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	250 A
Maximum Drain Source Voltage	40 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.2V
Maximum Power Dissipation	230 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.67mm
Width	9.65mm
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	150 nC @ 10 V
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.3V
Height	4.83mm