N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB Infineon IRF630NPBF

RS Stock No.:: 543-0068
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF630NPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB Infineon IRF630NPBF

มีส่วนลดเมื่อซื้อจำนวนมาก

ราคา / Price Each**

THB38.54

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB41.24

(รวมภาษีมูลค่าเพิ่ม)

50 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)*

* วันที่จัดส่งอาจเปลี่ยนแปลงได้ตามจำนวนสินค้าที่คุณเลือกหรือที่อยู่จัดส่งของคุณ

ฟรี ค่าจัดส่งสำหรับการสั่งซื้อมากกว่า THB2,500.00 (ไม่รวมภาษี)

เช็คสต็อกแบบเรียลไทม์ / Real time qty checker

ชิ้น	ต่อหน่วย
1 - 12	THB38.54
13 - 24	THB37.57
25 +	THB37.00

**ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 543-0068
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF630NPBF
ผู้ผลิต / Manufacturer:: Infineon

ล็อกอินเพื่อดูโมเดล CAD

Infineon HEXFET Series MOSFET, 9.3A Maximum Continuous Drain Current, 82W Maximum Power Dissipation - IRF630NPBF

This N-channel MOSFET is designed for a range of applications in the automation and electronics sectors. It offers optimal power dissipation capabilities and efficient performance, crucial for high-performance systems. With a maximum drain-source voltage of 200V and a continuous drain current of 9.3A, it ensures dependable operation in challenging electronic environments.

Features & Benefits

• High power rating supports extensive electrical applications
• Efficient design lowers thermal resistance for effective cooling
• Fast switching speeds improve performance in dynamic systems
• Simple drive requirements aid in circuit integration
• Fully avalanche rated, making it suitable for rugged conditions

Applications

• Utilised in industrial power supplies to maintain stable voltage regulation
• Employed in motor control systems for efficient functionality
• Ideal for DC-DC converters and power management circuits
• Used in HVAC systems to control compressor motors
• Appropriate for renewable energy systems, enhancing power efficiency

What is the maximum gate-source voltage that can be applied?

The maximum gate-source voltage is ±20V, ensuring compatibility with various circuit designs.

How does the device handle thermal dissipation during operation?

It has a power dissipation capacity of 82W, allowing for efficient heat management while in use.

Is there a specific mounting type recommended for optimal performance?

The MOSFET is intended for through-hole mounting, which promotes reliable thermal management and electrical connectivity.

What type of applications benefit from its fast switching capabilities?

Applications requiring high-speed operation, like switching power supplies and compact converters, take advantage of its swift switching speeds.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	9.3 A
Maximum Drain Source Voltage	200 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	82 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Length	10.54mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	35 nC @ 10 V
Width	4.69mm
Minimum Operating Temperature	-55 °C
Height	8.77mm
Forward Diode Voltage	1.3V