Vishay SIHP N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3

RS Stock No.:: 268-8320
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: SIHP150N60E-GE3
ผู้ผลิต:: Vishay

Vishay SIHP N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3

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RS Stock No.:: 268-8320
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: SIHP150N60E-GE3
ผู้ผลิต:: Vishay

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	22A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220AB
	Series	SIHP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.158Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	179W
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	เลือกทั้งหมด
	Brand Vishay
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 22A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220AB
	Series SIHP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.158Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 179W
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP150N60E-GE3

COO (Country of Origin):: CN

Vishay SIHP Series MOSFET, 650V Maximum Drain Source Voltage, 22A Maximum Continuous Drain Current - SIHP150N60E-GE3

This n-channel MOSFET is a high-voltage power transistor designed for switching and amplification tasks in demanding electronic systems. It operates reliably across a wide temperature range and is supplied in a through‑hole TO-220AB package suitable for conventional board mounting. The device complies with RoHS directives and is intended for applications requiring substantial voltage handling and moderate current capability.

Features and Benefits:

• 650V drain rating enables use in high-voltage switching
• 22A continuous drain current supports sustained load flow
• 0.158Ω Rds(on) reduces conduction losses in power paths
• 36nC typical gate charge allows predictable switching profiles
• 179W maximum power dissipation handles significant thermal load

Applications

• Suitable for high-voltage SMPS primary switching
• Ideal for industrial motor inverter stages
• Used with power supplies in telecom rectification
• Can be used for photovoltaic inverter front-ends

What gate voltage limits should be observed during drive design?

The gate must not be driven beyond ±30V relative to source to prevent gate-oxide stress and ensure long-term reliability.

How does thermal management influence practical power handling?

The 179W dissipation rating requires adequate heatsinking and a thermal interface to maintain junction temperature below the 150°C maximum under continuous load.

What ambient temperature range can systems expect around this device?

It is specified to operate from -55°C up to 150°C, permitting use in environments with extreme cold and elevated thermal conditions when correctly mounted.

How does the device’s channel mode affect circuit behaviour?

As an enhancement-mode N-channel device, it remains off at zero gate bias and requires positive gate drive to conduct, simplifying control in low-side and high-side topologies.