Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3

This MOSFET is a high-voltage N-channel enhancement device designed for power switching in industrial and electronic systems. It operates across a broad temperature range and is intended for PCB mounting in applications that require high drain-source voltage handling and substantial current capability. The component is supplied in a Compact PowerPAK package suitable for dense board layouts.

• 650V maximum drain-source voltage enables high-voltage switching applications • 24A continuous drain current supports substantial load currents • 0.1Ω Rds(on) reduces conduction losses and improves efficiency • 132W power dissipation allows sustained power handling in thermal designs • 53nC typical gate charge at Vgs limits switching energy for Faster transitions • 150°C maximum operating temperature permits elevated thermal operating envelopes

• Suitable for high-voltage power supplies and converters • Ideal for industrial motor-drive inverter stages • Used for switched-mode power supply primary-side switches • Can be used for photovoltaic inverter power stages • Suitable for power-factor-correction circuits

The gate-source voltage must not exceed 30V to prevent gate-oxide overstress and ensure reliable switching.

It is specified to operate down to -55°C, maintaining enhancement-mode conduction characteristics at sub-zero temperatures.

The component is supplied in a PowerPAK 10x12 package with eight pins, facilitating automated soldering and thermal contact on PCB layouts.

A 53nC gate charge at the rated gate drive influences gate-driver sizing and switching losses, informing selection of driver current capability.