DiodesZetex Dual DMHT10H032LFJ 1 Type N-Channel MOSFET, 6 A, 100 V Enhancement, 12-Pin VDFN DMHT10H032LFJ-13
- RS Stock No.:
- 213-9147
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- DMHT10H032LFJ-13
- ผู้ผลิต:
- DiodesZetex
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
ยอดรวมย่อย (1 แพ็ค แพ็คละ 10 ชิ้น)*
THB378.28
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB404.76
(รวมภาษีมูลค่าเพิ่ม)
ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 10 - 740 | THB37.828 | THB378.28 |
| 750 - 1490 | THB36.883 | THB368.83 |
| 1500 + | THB36.315 | THB363.15 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 213-9147
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- DMHT10H032LFJ-13
- ผู้ผลิต:
- DiodesZetex
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | DMHT10H032LFJ | |
| Package Type | VDFN | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Maximum Power Dissipation Pd | 64W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.5 mm | |
| Height | 0.8mm | |
| Standards/Approvals | AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020 | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series DMHT10H032LFJ | ||
Package Type VDFN | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Maximum Power Dissipation Pd 64W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 4.5 mm | ||
Height 0.8mm | ||
Standards/Approvals AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020 | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
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