- RS Stock No.:
- 205-2450
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- NTBG080N120SC1
- ผู้ผลิต / Manufacturer:
- onsemi
- RS Stock No.:
- 205-2450
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- NTBG080N120SC1
- ผู้ผลิต / Manufacturer:
- onsemi
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor silicon carbide (SiC) N-Channel MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Low on resistance 80mohm type
High Junction temperature
Ultra low gate charge
Low effective output capacitance
High Junction temperature
Ultra low gate charge
Low effective output capacitance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 30 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 7 |
Maximum Drain Source Resistance | 110 mΩ |
Maximum Gate Threshold Voltage | 4.3V |
Number of Elements per Chip | 1 |
Transistor Material | Si |