Vishay Siliconix SQJ872EP Type N-Channel MOSFET, 24.5 A, 150 V Enhancement, 8-Pin SO-8L SQJ872EP-T1_GE3
- RS Stock No.:
- 178-3903
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SQJ872EP-T1_GE3
- ผู้ผลิต:
- Vishay Siliconix
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
ยอดรวมย่อย (1 แพ็ค แพ็คละ 10 ชิ้น)*
THB398.50
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB426.40
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
- 2,920 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 10 - 740 | THB39.85 | THB398.50 |
| 750 - 1490 | THB38.854 | THB388.54 |
| 1500 + | THB38.256 | THB382.56 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 178-3903
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SQJ872EP-T1_GE3
- ผู้ผลิต:
- Vishay Siliconix
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24.5A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SQJ872EP | |
| Package Type | SO-8L | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0395Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 55W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5mm | |
| Standards/Approvals | RoHS | |
| Length | 5.99mm | |
| Height | 1.07mm | |
| Automotive Standard | AEC-Q101 | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24.5A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SQJ872EP | ||
Package Type SO-8L | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0395Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 55W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 175°C | ||
Width 5mm | ||
Standards/Approvals RoHS | ||
Length 5.99mm | ||
Height 1.07mm | ||
Automotive Standard AEC-Q101 | ||
สถานะRoHS: ได้รับการยกเว้น
- COO (Country of Origin):
- CN
Vishay SQJ872EP Series MOSFET, 150V Drain Source Voltage, 24.5A Continuous Drain Current - SQJ872EP-T1_GE3
Features and Benefits:
• High voltage capability 150V enabling robust switching headroom
• Continuous current rating 24.5A supporting substantial load currents
• Gate charge 14nC enabling efficient switching control
• Power dissipation 55W allowing sustained thermal load handling
• Wide gate tolerance ±20V making gate drive design flexible
Applications
• Ideal for industrial motor drive switch arrays
• Used with DC-DC converters in high-voltage systems
• Can be used for synchronous rectification in power supplies
• Useful in inverter and UPS front-end switching stages
What temperature range can it tolerate in harsh installations?
What package and mounting approach does it use for board assembly?
How does its forward voltage impact system design?
Is the device suitable for regulated manufacturing and environmental requirements?
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