Vishay IRFU1N60A Type N-Channel Power MOSFET, 1.4 A, 600 V Enhancement, 3-Pin IPAK IRFU1N60APBF
- RS Stock No.:
- 145-1664
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRFU1N60APBF
- ผู้ผลิต:
- Vishay
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ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย (1 หลอด หลอดละ 75 ชิ้น)*
THB2,405.55
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB2,573.925
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- 525 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย | ต่อหลอด* |
|---|---|---|
| 75 - 75 | THB32.074 | THB2,405.55 |
| 150 - 225 | THB31.111 | THB2,333.33 |
| 300 + | THB30.178 | THB2,263.35 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 145-1664
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRFU1N60APBF
- ผู้ผลิต:
- Vishay
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | IPAK | |
| Series | IRFU1N60A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 36W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.73mm | |
| Width | 2.39mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type IPAK | ||
Series IRFU1N60A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 36W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.73mm | ||
Width 2.39mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Vishay IRFU1N60A Series Power MOSFET, 600V Drain-Source Voltage, 36W Power Dissipation - IRFU1N60APBF
This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control tasks in industrial electronic systems. It is suitable for through-hole board assembly and offers conservative operating limits for demanding environments where high voltage and thermal endurance are required.
Features and Benefits:
• 600V drain rating enables operation in high-voltage circuits
• 1.4 A continuous drain current permits light to moderate load handling
• 7 Ω RDS(on) provides predictable conduction characteristics
• 14 nC typical gate charge supports lower switching losses
• 36W power dissipation allows sustained power handling at elevated temperatures
• 150 °C maximum junction temperature supports high-temperature operation
• 1.4 A continuous drain current permits light to moderate load handling
• 7 Ω RDS(on) provides predictable conduction characteristics
• 14 nC typical gate charge supports lower switching losses
• 36W power dissipation allows sustained power handling at elevated temperatures
• 150 °C maximum junction temperature supports high-temperature operation
Applications
• Suitable for switch-mode power supplies in industrial automation equipment
• Ideal for high-voltage power transistor roles in motor-control interfaces
• Used for auxiliary power conversion in electrical distribution modules
• Can be used for signal switching in instrumentation requiring through-hole parts
• Ideal for high-voltage power transistor roles in motor-control interfaces
• Used for auxiliary power conversion in electrical distribution modules
• Can be used for signal switching in instrumentation requiring through-hole parts
What gate-drive considerations should I allow for?
Drive circuitry should accommodate a maximum gate-source rating of 30V and provide sufficient drive current to charge the 14 nC gate for the intended switching speed.
How does the package affect mounting and thermal handling?
The three-pin IPAK through-hole package facilitates robust soldered connections and a mounting style that can aid heat transfer to a copper plane or heatsink arrangement.
What ambient temperature range is supported for deployment?
The device operates across a temperature span from -55 °C to a maximum of 150 °C
thermal management is required to keep the junction temperature below the limit.
Are there any environmental or regulatory attributes to note?
The component meets RoHS criteria for restricted substances and is not specified as meeting automotive standards.
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