Vishay E Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-080
- Mfr. Part No.:
- SIHR100N60E-T1-GE3
- Brand:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 tape of 1 unit)*
THB216.35
(exc. VAT)
THB231.49
(inc. VAT)
ส่งฟรีหากซื้อเกิน ฿2,500.00
หมดสต็อกชั่วคราว
- จะส่งได้หลังจากวันที่ 22 มิถุนายน 2569 ไปอีกประมาณ 7 วันทำการ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | THB216.35 |
| 10 - 49 | THB209.91 |
| 50 - 99 | THB203.48 |
| 100 + | THB175.26 |
*price indicative
- RS Stock No.:
- 653-080
- Mfr. Part No.:
- SIHR100N60E-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.105Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 347W | |
| Maximum Operating Temperature | 150°C | |
| Width | 8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK | ||
Series E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.105Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 347W | ||
Maximum Operating Temperature 150°C | ||
Width 8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay 4th generation E Series Power MOSFET designed for high-efficiency switching applications. It features a low figure of merit (FOM), reduced effective capacitance, and optimized thermal performance in a Compact PowerPAK 8x8LR package. Ideal for use in server, telecom, and power factor correction supplies, it delivers reliable performance in demanding environments.
Reduced switching and conduction losses
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR100N60E-T1-GE3
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3
- Vishay SIS4406DN Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK
- Vishay SIS5712DN Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK