N-Channel MOSFET, 28 A, 55 V, 3-Pin DPAK Infineon IRLR2705TRPBF

RS Stock No.:: 913-4809
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRLR2705TRPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel MOSFET, 28 A, 55 V, 3-Pin DPAK Infineon IRLR2705TRPBF

มีส่วนลดเมื่อซื้อจำนวนมาก

ราคา / Price Each (On a Reel of 2000)**

THB10.896

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB11.659

(รวมภาษีมูลค่าเพิ่ม)

2000 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)*

* วันที่จัดส่งอาจเปลี่ยนแปลงได้ตามจำนวนสินค้าที่คุณเลือกหรือที่อยู่จัดส่งของคุณ

ฟรี ค่าจัดส่งสำหรับการสั่งซื้อมากกว่า THB3,500.00 (ไม่รวมภาษี)

ชิ้น	ต่อหน่วย	ต่อม้วน**
2000 - 2000	THB10.896	THB21,792.00
4000 - 6000	THB10.569	THB21,138.00
8000 +	THB10.252	THB20,504.00

**ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 913-4809
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRLR2705TRPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 28A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLR2705TRPBF

This MOSFET is engineered for outstanding performance across a range of electronic applications. Leveraging modern advancements in MOSFET technology, it plays a significant role in switching applications where efficiency and dependability are essential. Its distinct features make it an excellent option for automation and electrical systems that require high current handling and robust operation.

Features & Benefits

• High continuous drain current of 28A improves performance
• Maximum voltage rating of 55V boosts switching capabilities
• Low on-resistance of 65mΩ minimises energy loss
• Operates effectively at temperatures up to +175°C
• Designed for surface mounting in a DPAK TO-252 package for efficiency
• Single enhancement mode configuration facilitates circuit design

Applications

• Suitable for power management in industrial automation
• Ideal for energy-efficient switching in power supplies
• Commonly utilised in motor control circuits
• Appropriate for use in DC-DC converters

What is the maximum power dissipation for this component?

The maximum power dissipation is 68W, allowing for efficient heat management during operation.

How does the operating temperature range affect usage?

The device operates effectively between -55°C and +175°C, making it suitable for various environmental conditions.

Is there a specific installation method recommended for this MOSFET?

The device is designed for surface mounting using techniques like soldering to ensure reliable connections.

Can this MOSFET be used in parallel with others?

Yes, it can be used in parallel configurations, but proper thermal management is essential to prevent overheating.

What type of gate drive is recommended for optimal performance?

A logic-level gate drive is recommended for efficient switching, ensuring the device operates within its specified threshold levels.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	55 V
Package Type	DPAK (TO-252)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	68 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	25 nC @ 5 V
Length	6.73mm
Number of Elements per Chip	1
Transistor Material	Si
Width	6.22mm
Minimum Operating Temperature	-55 °C
Height	2.39mm