Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-252

RS Stock No.:: 913-4789
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRFR5305TRPBF
ผู้ผลิต:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-252

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

มีส่วนลดเมื่อซื้อจำนวนมาก

ยอดรวมย่อย (1 รีล รีลละ 2000 ชิ้น)*

THB33,270.00

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB35,598.00

(รวมภาษีมูลค่าเพิ่ม)

ไม่สามารถเข้าถึงข้อมูลสต็อกได้ในขณะนี้

ชิ้น	ต่อหน่วย	ต่อม้วน*
2000 - 2000	THB16.635	THB33,270.00
4000 - 6000	THB16.135	THB32,270.00
8000 +	THB15.651	THB31,302.00

*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 913-4789
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRFR5305TRPBF
ผู้ผลิต:: Infineon

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.3V
	Typical Gate Charge Qg @ Vgs	63nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	110W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	6.22 mm
	Height	2.39mm
	Length	6.73mm
	Standards/Approvals	No
	Automotive Standard	No

	เลือกทั้งหมด
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.3V
	Typical Gate Charge Qg @ Vgs 63nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 110W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 6.22 mm
	Height 2.39mm
	Length 6.73mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFR5305TRPBF

This MOSFET offers advanced performance for various electronic applications. Its low on-resistance and high current handling capabilities contribute to effective power management. With a robust design and reliable electrical characteristics, this component is suitable for various environments in automation and electronic systems.

Features & Benefits

• Achieves low on-resistance for enhanced efficiency

• Supports a maximum continuous drain current of 31A

• Designed for ease of use in surface mount applications

• Capable of operating within a temperature range of -55°C to +175°C

• Facilitates quick switching speeds for improved performance

• Allows a maximum power dissipation of 110W for diverse applications

Applications

• Utilised in power management systems

• Suitable for motor control

• Employed in switching power supplies for electronic devices

• Used in automotive circuits for improved efficiency

What are the recommended soldering techniques for installation?

Use vapour phase, infrared, or wave soldering techniques for optimal results, ensuring minimal thermal stress on the component.

Can it handle high temperature environments?

Yes, it operates effectively within a temperature range of -55°C to +175°C, making it appropriate for extreme conditions.

What is the significance of low RDS(on)?

Low RDS(on) reduces power losses, enhancing overall efficiency and decreasing heat generation during operation.

How do I ensure accurate switching behaviour?

Implement suitable gate drive circuits to achieve precise turn-on and turn-off characteristics, following the suggested trigger voltages.

Is this compatible with standard PCB layouts?

Yes, it is designed in DPAK packaging, enabling straightforward integration into typical PCB designs without the need for special modifications.