P-Channel MOSFET, 31 A, 55 V, 3-Pin D2PAK Infineon IRF5305STRLPBF

RS Stock No.:: 165-5895
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF5305STRLPBF
ผู้ผลิต / Manufacturer:: Infineon

P-Channel MOSFET, 31 A, 55 V, 3-Pin D2PAK Infineon IRF5305STRLPBF

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

มีส่วนลดเมื่อซื้อจำนวนมาก

ราคา / Price Each (On a Reel of 800)**

THB27.709

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB29.649

(รวมภาษีมูลค่าเพิ่ม)

สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 06/05/2025, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)*

* วันที่จัดส่งอาจเปลี่ยนแปลงได้ตามจำนวนสินค้าที่คุณเลือกหรือที่อยู่จัดส่งของคุณ

ฟรี ค่าจัดส่งสำหรับการสั่งซื้อมากกว่า THB3,500.00 (ไม่รวมภาษี)

ชิ้น	ต่อหน่วย	ต่อม้วน**
800 - 800	THB27.709	THB22,167.20
1600 - 2400	THB26.878	THB21,502.40
3200 +	THB26.072	THB20,857.60

**ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 165-5895
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF5305STRLPBF
ผู้ผลิต / Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305STRLPBF

This P-channel MOSFET is tailored for high-efficiency applications, delivering reliability and performance. It employs enhancement mode functionality, making it versatile for various electronic circuits. With robust specifications, it serves as a suitable option for automation and power management in electrical and mechanical environments.

Features & Benefits

• Maximum continuous drain current of 31A
• Maximum drain source voltage of 55V
• Surface mount configuration for seamless integration
• Maximum power dissipation capability of 110W for efficient operation
• Enhanced thermal performance with a maximum operating temperature of +175°C
• Low on-resistance of 60mΩ for improved efficiency

Applications

• For use with motor controls
• Suitable for power supply circuits
• Electronic switching
• Energy management solutions

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 4V, providing adequate control in circuit design.

How does the MOSFET handle heat?

It features a maximum power dissipation of 110W, enabling effective heat management in demanding applications.

Is this product compatible with surface mount designs?

Yes, it comes in a D2PAK package type designed specifically for surface mount applications.

What is the minimum operating temperature for functionality?

The device operates effectively at a minimum temperature of -55°C, ensuring versatility for various environments.

How does the on-resistance impact performance?

The low maximum drain source resistance of 60mΩ contributes to higher efficiency and performance in power delivery applications.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ	Value
Channel Type	P
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	55 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	60 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	9.65mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Length	10.67mm
Typical Gate Charge @ Vgs	63 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	4.83mm