P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB Infineon IRF5305PBF

RS Stock No.:: 541-1736
Distrelec หมายเลขบทความ:: 303-41-281
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF5305PBF
ผู้ผลิต / Manufacturer:: Infineon

P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB Infineon IRF5305PBF

มีส่วนลดเมื่อซื้อจำนวนมาก

ราคา / Price Each**

THB54.01

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB57.79

(รวมภาษีมูลค่าเพิ่ม)

373 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)*

* วันที่จัดส่งอาจเปลี่ยนแปลงได้ตามจำนวนสินค้าที่คุณเลือกหรือที่อยู่จัดส่งของคุณ

ฟรี ค่าจัดส่งสำหรับการสั่งซื้อมากกว่า THB3,500.00 (ไม่รวมภาษี)

ชิ้น	ต่อหน่วย
1 - 12	THB54.01
13 - 64	THB52.95
65 +	THB43.57

**ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 541-1736
Distrelec หมายเลขบทความ:: 303-41-281
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF5305PBF
ผู้ผลิต / Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305PBF

This MOSFET is tailored for high-efficiency power applications, providing both flexibility and reliability. Its enhancement mode operation makes it suitable for various systems requiring controlled switching, particularly in industrial and automation environments.

Features & Benefits

• Continuous drain current capacity of 31A supports demanding applications
• Voltage rating of 55V facilitates dependable switching
• Low on-resistance of 60mΩ reduces power loss
• TO-220AB package design enhances thermal performance
• Gate-source voltage range of ±20V accommodates diverse applications
• Rapid switching optimisation boosts overall system efficiency

Applications

• Used in motor control systems for efficient operation
• Applicable in power supply circuits for stable performance
• Integrated into electronic devices requiring effective switching capabilities
• Suitable for deployment in renewable energy systems

What is the temperature range for operation?

It operates within -55°C to +175°C, making it apt for extreme conditions.

How does the package type affect performance?

The TO-220AB package provides low thermal resistance, improving cooling efficiency during operation.

Can it handle pulsed drain current applications?

Yes, it supports pulsed drain currents up to 110A, ensuring adequate performance for transient demands.

What type of transistor is this?

It is a P-channel Si MOSFET, optimised for high-efficiency applications.

Is it compatible with automated assembly processes?

Yes, the through-hole design allows for integration into automated systems and circuit boards.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ	Value
Channel Type	P
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	60 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.54mm
Maximum Operating Temperature	+175 °C
Width	4.69mm
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	63 nC @ 10 V
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.3V
Height	8.77mm