Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 826-9412
- Mfr. Part No.:
- BSS316NH6327XTSA1
- Brand:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 250 units)*
THB754.50
(exc. VAT)
THB807.25
(inc. VAT)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- เพิ่มอีก 250 ชิ้นจะส่งได้หลังจากวันที่ 09 กุมภาพันธ์ 2569 ไปอีกประมาณ 7 วันทำการ
- เพิ่มอีก 4,000 ชิ้นจะส่งได้หลังจากวันที่ 16 กุมภาพันธ์ 2569 ไปอีกประมาณ 7 วันทำการ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
Units | Per unit | Per Reel* |
|---|---|---|
| 250 - 500 | THB3.018 | THB754.50 |
| 750 - 1250 | THB2.943 | THB735.75 |
| 1500 + | THB2.898 | THB724.50 |
*price indicative
- RS Stock No.:
- 826-9412
- Mfr. Part No.:
- BSS316NH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Width | 1.3 mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Width 1.3 mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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