Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3.6 A, 80 V Enhancement, 8-Pin SOIC IRF7380TRPBF

RS Stock No.:: 826-8904
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF7380TRPBF
ผู้ผลิต:: Infineon

Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3.6 A, 80 V Enhancement, 8-Pin SOIC IRF7380TRPBF

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

มีส่วนลดเมื่อซื้อจำนวนมาก

ยอดรวมย่อย (1 แพ็ค แพ็คละ 20 ชิ้น)*

THB553.78

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB592.54

(รวมภาษีมูลค่าเพิ่ม)

ส่งฟรีหากซื้อเกิน ฿2,500.00

หมดสต็อกชั่วคราว

2,060 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ

ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง

ชิ้น	ต่อหน่วย	ต่อแพ็ค*
20 - 980	THB27.689	THB553.78
1000 - 1980	THB26.997	THB539.94
2000 +	THB26.581	THB531.62

*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 826-8904
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF7380TRPBF
ผู้ผลิต:: Infineon

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	80V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	73mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	15nC
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Height	1.5mm
	Length	5mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	เลือกทั้งหมด
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 80V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 73mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 15nC
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Height 1.5mm
	Length 5mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Infineon HEXFET Series MOSFET, 3.6A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7380TRPBF

This MOSFET is designed for efficient power management in various electronic applications. With a high voltage rating and a continuous drain current of 3.6A, it is suitable for high frequency DC-DC converters, ensuring reliable performance. Its Advanced design offers a practical solution for professionals in automation, electronics, and mechanical sectors seeking a versatile component for their circuits.

Features & Benefits

• Industry-standard SO-8 package ensures compatibility across different vendors

• Low Rds(on) of 73mΩ optimises efficiency in power applications

• Enhancement mode operation enhances performance characteristics

• Low gate charge of 15nC facilitates quicker switching speeds

• Maximum drain-source voltage of 80V accommodates high power needs

• RoHS compliant and halogen-free promotes environmental safety

Applications

• Used in high frequency DC-DC converters for power regulation

• Effective in battery management systems that require low power loss

• Suitable for motor controllers needing efficient switching performance

• Employed in power supply units to improve overall efficiency

• Appropriate for driving inductive loads like relays and solenoids

What are the implications of the maximum continuous drain current?

The maximum continuous drain current of 3.6A indicates its capability to manage higher currents in applications such as power supply circuits, ensuring stable operation without overheating.

How does the low Rds(on) affect performance?

The low Rds(on) of 73mΩ reduces power losses during operation, enhancing overall system efficiency, particularly beneficial in high frequency switching applications.

What is the significance of its temperature ratings?

Operating between -55°C and +150°C ensures the component can withstand harsh environmental conditions, making it suitable for industrial applications.

Can this component be directly mounted on PCBs?

Yes, its surface mount design allows for easy integration into PCB layouts, promoting efficient manufacturing processes and ensuring space-saving benefits in Compact designs.

How does the gate threshold voltage influence its operation?

With a gate threshold voltage ranging from 2V to 4V, it provides design flexibility, allowing compatibility with various control signals while ensuring effective device activation.