Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC

RS Stock No.:: 168-8757
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF7103TRPBF
ผู้ผลิต:: Infineon

Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

ยอดรวมย่อย (1 รีล รีลละ 4000 ชิ้น)*

THB43,168.00

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB46,188.00

(รวมภาษีมูลค่าเพิ่ม)

ส่งฟรีหากซื้อเกิน ฿2,500.00

มีในสต็อก

4,000 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ

ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง

ชิ้น	ต่อหน่วย	ต่อม้วน*
4000 +	THB10.792	THB43,168.00

*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 168-8757
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF7103TRPBF
ผู้ผลิต:: Infineon

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	50V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	200mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Height	1.5mm
	Length	5mm
	Standards/Approvals	No
	Width	4 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	เลือกทั้งหมด
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 50V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 200mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Height 1.5mm
	Length 5mm
	Standards/Approvals No
	Width 4 mm
	Number of Elements per Chip 2
	Automotive Standard No

Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7103TRPBF

This MOSFET is designed for efficient performance across various applications. Its Durable construction is particularly beneficial in circuits requiring effective power management, making it suitable for electrical and automation sectors. With a maximum drain-source voltage of 50V, it ensures reliable switching capabilities to meet application demands.

Features & Benefits

• Low Rds(on) of 200mΩ for improved efficiency

• Maximum continuous drain current of 3A enhances power handling

• Operational temperatures up to +150°C for increased reliability

• Wide gate threshold range of 1V to 3V for flexible control

• Dual isolated transistor configuration aids circuit integration

• Surface mount design simplifies PCB assembly and optimises space

Applications

• Used in power supply designs for energy-efficient operation

• Integrated into motor drive for efficient motor control

• Employed in switching power supplies for improved performance

• Suitable for automation systems needing dependable switching components

What is the recommended operating temperature range for this component?

The component operates efficiently within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does one determine the suitable gate voltage for optimal performance?

The acceptable gate-source voltage varies from -20V to +20V, providing flexibility in control circuit designs. For best results, operating near 10V is recommended, as indicated by typical gate charge specifications.

What safety precautions should be taken when using this device?

It is important to not exceed the voltage and current ratings during operation to avoid potential failure or damage. Moreover, appropriate heatsinking may be necessary to maintain optimal operating temperatures under heavy loads.

Can it be used in circuits requiring fast switching?

Yes, this MOSFET is designed for fast switching capabilities, making it well-suited for applications requiring high-speed performance, such as PWM control in motor drivers.

Is this MOSFET compatible with standard PCB layouts?

The surface mount design complies with standard PCB layouts, facilitating integration into existing circuits with minimal adjustments for placement.