Renesas N-Channel MOSFET, 280 A, 60 V, 3-Pin TO-3P 2SK3307-A

Brand

Renesas Electronics

Channel Type

N

Maximum Continuous Drain Current

280 A

Maximum Drain Source Voltage

60 V

Package Type

TO-3P

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

90 nC @ 10 V

Length

15.7mm

Number of Elements per Chip

1

Transistor Material

Si

Height

20mm