Renesas N-Channel MOSFET, 300 A, 60 V, 3-Pin TO-3P 2SK3357-A

Brand

Renesas Electronics

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

60 V

Package Type

TO-3P

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.7mm

Typical Gate Charge @ Vgs

170 nC @ 10 V

Height

20mm