Infineon HEXFET Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin IPAK

RS Stock No.:: 541-1607
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRFU024NPBF
ผู้ผลิต:: Infineon

ยอดรวมย่อย (1 ชิ้น)*

THB33.05

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB35.36

(รวมภาษีมูลค่าเพิ่ม)

ส่งฟรีหากซื้อเกิน ฿2,500.00

หมดสต็อกชั่วคราว

30 ชิ้นจะส่งได้หลังจากวันที่ 01 มกราคม 2569 ไปอีกประมาณ 7 วันทำการ

ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง

ชิ้น	ต่อหน่วย
1 +	THB33.05

*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 541-1607
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRFU024NPBF
ผู้ผลิต:: Infineon

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	IPAK
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	75mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Power Dissipation Pd	45W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	6.22mm
	Width	2.39 mm
	Standards/Approvals	No
	Length	6.73mm
	Automotive Standard	No

	เลือกทั้งหมด
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type IPAK
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 75mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Power Dissipation Pd 45W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 6.22mm
	Width 2.39 mm
	Standards/Approvals No
	Length 6.73mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRFU024NPBF

This high-performance N-channel MOSFET is suitable for various electrical applications. With specifications including a maximum continuous drain current of 17A and a maximum drain-source voltage of 55V, this component is important for professionals in the automation and electronics fields. Its capability to operate in high-temperature environments contributes to its reliability for demanding projects.

Features & Benefits

• Maximum power dissipation of up to 45W for robust operation

• Low drain-source resistance of 75mΩ enhances energy efficiency

• Maximum gate threshold of 4V for improved performance

• Single transistor configuration simplifies design integration

• Designed for through-hole mounting in a TO-251 package for easy installation

Applications

• Used in power management systems for enhanced efficiency

• Ideal for high-frequency switching

• Suitable for automotive electronics ensuring consistent performance

• Employed in industrial automation for control systems

• Appropriate for telecommunications to maintain signal integrity

What is the maximum continuous drain current supported?

The maximum continuous drain current supported is 17A, making it suitable for various applications requiring significant power handling.

How does temperature affect performance?

The component operates effectively within a wide temperature range from -55°C to +175°C, ensuring stability under extreme conditions.

Can it handle varying gate-source voltages?

Yes, it can accommodate gate-source voltages from -20 V to +20 V, providing flexibility in circuit design.

What are the implications of low drain-source resistance?

A low drain-source resistance of 75mΩ leads to reduced heat generation and improved efficiency, which is crucial for high-performance applications.

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.