Vishay SIHH Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3

RS Stock No.:: 279-9915
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: SIHH155N60EF-T1GE3
ผู้ผลิต:: Vishay

Vishay SIHH Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

ยอดรวมย่อย (1 รีล รีลละ 3000 ชิ้น)*

THB319,410.00

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB341,760.00

(รวมภาษีมูลค่าเพิ่ม)

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ชิ้น	ต่อหน่วย	ต่อม้วน*
3000 +	THB106.47	THB319,410.00

*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 279-9915
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: SIHH155N60EF-T1GE3
ผู้ผลิต:: Vishay

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK 8 x 8
	Series	SIHH
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.159Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	156W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	38nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	8mm
	Automotive Standard	No

	เลือกทั้งหมด
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK 8 x 8
	Series SIHH
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.159Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 156W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 38nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 8mm
	Automotive Standard No

Datasheet - SIHH155N60EF-T1GE3

Vishay SIHH Series MOSFET, 600V Drain Source Voltage, 18A Continuous Drain Current - SIHH155N60EF-T1GE3

This MOSFET is a high-voltage N-channel switching transistor designed for surface-mount power applications in industrial systems. It operates as an enhancement-mode device for switching and amplification tasks where elevated drain-source voltage capability and moderate current handling are required. The component is supplied in a Compact PowerPAK package suited to dense assemblies and thermal-management considerations.

Features and Benefits:

• 600V drain-source rating enables high-voltage switching
• 18A continuous drain current supports substantial load currents
• 0.159Ω Rds(on) reduces conduction losses under load
• 156W power dissipation allows high-power operation
• 38nC typical gate charge ensures predictable drive requirements
• 150°C maximum operating temperature tolerates elevated junction loads

Applications

• Suitable for high-voltage motor-drive switching stages
• Ideal for SMPS primary-side switching in industrial supplies
• Used for AC-DC conversion in power-management modules
• Can be used for inductive-load switching in automation equipment

What are the thermal limits when designing heat-sinking?

The device permits a maximum operating temperature of 150°C and a total power dissipation of 156W

thermal layout should account for package thermal resistance and ensure adequate PCB copper or heatsinking to maintain junction temperature within limits.

What gate drive considerations are required for fast switching?

Typical gate charge is 38nC at the specified gate drive

choose a driver capable of delivering the required charge within the desired switching time while respecting the maximum gate-source voltage of 30V.

How does the device behave under low-temperature extremes?

It is specified for operation down to -55°C, so materials and soldering processes must accommodate thermal cycling across that range.

Are there mounting or pin-count considerations for PCB layout?

The component is a surface-mount PowerPAK with four pins

PCB footprint and thermal vias should be designed to match the package for electrical and thermal performance.