Vishay EF Type N-Channel Power MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- RS Stock No.:
- 268-8296
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SIHG085N60EF-GE3
- ผู้ผลิต:
- Vishay
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
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ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย (1 หลอด หลอดละ 25 ชิ้น)*
THB3,906.05
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB4,179.475
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
สต็อกสุดท้ายของ RS
- 475 ชิ้นสุดท้ายพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ชิ้น | ต่อหน่วย | ต่อหลอด* |
|---|---|---|
| 25 - 75 | THB156.242 | THB3,906.05 |
| 100 - 475 | THB150.773 | THB3,769.33 |
| 500 - 975 | THB145.496 | THB3,637.40 |
| 1000 + | THB140.404 | THB3,510.10 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 268-8296
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SIHG085N60EF-GE3
- ผู้ผลิต:
- Vishay
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 184W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 184W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 34A Maximum Continuous Drain Current - SIHG085N60EF-GE3
This power MOSFET is a high-voltage N‑channel switching device designed for through‑hole mounting in power assemblies. It is intended for use where robust high-voltage switching and efficient conduction are required across extended temperature ranges, and it conforms to RoHS environmental restrictions.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications
• 34A continuous drain current supports substantial load handling
• 0.084Ω Rds(on) reduces conduction losses under load
• 184W power dissipation allows significant thermal throughput
• 63nC typical gate charge offers predictable drive requirements
• -55°C to 150°C operating range permits harsh environment use
• 34A continuous drain current supports substantial load handling
• 0.084Ω Rds(on) reduces conduction losses under load
• 184W power dissipation allows significant thermal throughput
• 63nC typical gate charge offers predictable drive requirements
• -55°C to 150°C operating range permits harsh environment use
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive inversion stages
• Used with discrete power converters in robotics
• Can be used for inverter front-end switching stages
• Suitable for power factor correction circuits
• Ideal for industrial motor drive inversion stages
• Used with discrete power converters in robotics
• Can be used for inverter front-end switching stages
• Suitable for power factor correction circuits
What package and mounting style does it use?
It is supplied in a TO-247AC package and designed for through‑hole mounting to enable secure board fixation and straightforward heatsinking.
What gate drive voltage limits should I observe?
The maximum gate‑to‑source rating is 30V, so gate drive circuitry must remain within this boundary to prevent gate damage.
How does thermal performance relate to installation?
The devices 184W dissipation rating requires adequate heatsinking and thermal management to maintain junction temperatures below specified limits during high‑power operation.
Is it suitable for automotive systems?
It is not specified to automotive standards
suitability depends on system safety and qualification requirements beyond the provided ratings.
ลิงก์ที่เกี่ยวข้อง
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