Infineon IPD Type P-Channel MOSFET, 180 A, 75 V P, 3-Pin TO-252 IPD380P06NMATMA1
- RS Stock No.:
- 244-8545
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPD380P06NMATMA1
- ผู้ผลิต:
- Infineon
มีส่วนลดเมื่อซื้อจำนวนมาก
ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย (2500 ชิ้น, ในม้วนขนาด 2500)*
THB79,445.00
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB85,005.00
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- 5,000 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย | ต่อม้วน* |
|---|---|---|
| 2500 - 2500 | THB31.778 | THB79,445.00 |
| 5000 - 5000 | THB30.189 | THB75,472.50 |
| 7500 + | THB28.679 | THB71,697.50 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 244-8545
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPD380P06NMATMA1
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 75V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD380P06NMATMA1
This MOSFET is a P-channel power transistor designed for high-current switching in surface-mount applications. It operates across a wide temperature range and is suitable for automotive and industrial contexts where elevated thermal and electrical performance are required.
Features and Benefits:
• 75V maximum drain-source voltage enables higher-voltage switching
• 3mΩ low Rds(on) reduces conduction losses during heavy current flow
• 180A continuous drain current supports sustained high-current loads
• 81W power dissipation handles significant thermal stress
• 80nC typical gate charge permits controlled switching energy management
• 20V maximum gate-source rating accommodates robust gate drive levels
• 3mΩ low Rds(on) reduces conduction losses during heavy current flow
• 180A continuous drain current supports sustained high-current loads
• 81W power dissipation handles significant thermal stress
• 80nC typical gate charge permits controlled switching energy management
• 20V maximum gate-source rating accommodates robust gate drive levels
Applications
• Suitable for high-current DC power distribution stages
• Ideal for automotive power modules meeting vehicle requirements
• Used for motor-drive low-side or high-side switching
• Can be used for board-level power management in harsh environments
• Used with thermal-management systems in power assemblies
• Ideal for automotive power modules meeting vehicle requirements
• Used for motor-drive low-side or high-side switching
• Can be used for board-level power management in harsh environments
• Used with thermal-management systems in power assemblies
What thermal range can it withstand in demanding environments?
It is rated to operate from −55°C up to 175°C to cover extreme temperature conditions.
How does the package affect mounting and assembly?
The TO-252 surface-mount package allows automated soldering and Compact board placement for power designs.
What gating considerations are necessary for switching performance?
Typical gate charge is 80nC, so gate drivers must supply sufficient charge for the intended switching speed.
What industry qualifications support its use in vehicle systems?
It meets the automotive AEC‑Q101 standard for components used in vehicle applications.
Are there environmental restrictions for its use regarding hazardous substances?
It is compliant with RoHS requirements limiting specified hazardous materials.
ลิงก์ที่เกี่ยวข้อง
- Infineon IPD Type P-Channel MOSFET 75 V P, 3-Pin TO-252 IPD380P06NMATMA1
- Infineon IPD Type P-Channel MOSFET 100 V N, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 100 V N, 3-Pin TO-252 IPD650P06NMATMA1
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD85P04P4L06ATMA2
- Infineon IPD Type P-Channel MOSFET 650 V N TO-252
- Infineon IPD Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
