Infineon CoolMOS P7 N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-220 IPA70R360P7SXKSA1
- RS Stock No.:
- 214-9007
- Distrelec หมายเลขบทความ:
- 304-39-406
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPA70R360P7SXKSA1
- ผู้ผลิต:
- Infineon
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
ยอดรวมย่อย (1 แพ็ค แพ็คละ 15 ชิ้น)*
THB409.41
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB438.08
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- 2,625 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 15 + | THB27.294 | THB409.41 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 214-9007
- Distrelec หมายเลขบทความ:
- 304-39-406
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPA70R360P7SXKSA1
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 26.5W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 26.5W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET, 700V Maximum Drain Source Voltage, 12.5A Maximum Continuous Drain Current - IPA70R360P7SXKSA1
This MOSFET is a high-voltage, N-channel enhancement transistor designed for power switching in industrial and power-conversion environments. It operates across a wide ambient temperature range and is supplied in a through-hole TO-220 package for straightforward board mounting and heat-sinking in discrete power assemblies.
Features and Benefits:
• 700V drain capability enables high-voltage switching applications
• 12.5A continuous current supports substantial load currents
• 360mΩ Rds minimises conduction losses at rated conditions
• 26.5W power dissipation allows sustained thermal loading
• 0.9V forward voltage reduces voltage drop in conduction
• 30V gate tolerance permits common gate-drive voltages
• 12.5A continuous current supports substantial load currents
• 360mΩ Rds minimises conduction losses at rated conditions
• 26.5W power dissipation allows sustained thermal loading
• 0.9V forward voltage reduces voltage drop in conduction
• 30V gate tolerance permits common gate-drive voltages
Applications
• Suitable for SMPS primary-side switching in high-voltage supplies
• Ideal for industrial power converters requiring 700V devices
• Used for discrete switch stages in high-voltage assemblies
• Can be used for through-hole prototyping and repair
• Suitable for systems operating across wide temperature ranges
• Ideal for industrial power converters requiring 700V devices
• Used for discrete switch stages in high-voltage assemblies
• Can be used for through-hole prototyping and repair
• Suitable for systems operating across wide temperature ranges
What is the allowable gate drive magnitude?
The device accepts up to 30V between gate and source as its maximum gate limit.
How does the package assist thermal management?
The TO-220 through-hole format permits direct attachment to heat-sinks and ease of mounting for improved heat dissipation.
What temperature extremes can it tolerate in operation?
It is rated for operation from -40°C up to +150°C ambient conditions.
What conduction characteristic affects power loss during on-state?
The on-resistance of 360mΩ directly influences conduction losses when carrying current.
Which parameter indicates continuous load capability?
The continuous drain current rating of 12.5A defines its steady-state current handling.
ลิงก์ที่เกี่ยวข้อง
- Infineon CoolMOS P7 N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220
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- Infineon CoolMOS P7 N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPS70R360P7SAKMA1
- Infineon 700V CoolMOS P7 N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220
- Infineon 700V CoolMOS P7 N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220 IPAN70R360P7SXKSA1
- Infineon 700V CoolMOS P7 N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252
- Infineon 700V CoolMOS P7 N-Channel MOSFET 700 V Enhancement, 3-Pin IPAK IPSA70R360P7SAKMA1
- Infineon 700V CoolMOS P7 N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252 IPD70R360P7SAUMA1
