- RS Stock No.:
- 170-2266
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPD25CN10NGATMA1
- ผู้ผลิต / Manufacturer:
- Infineon
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 06/05/2025, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (On a Reel of 2500)
THB23.444
(exc. VAT)
THB25.085
(inc. VAT)
Units | Per unit | Per Reel* |
2500 - 2500 | THB23.444 | THB58,610.00 |
5000 - 7500 | THB22.741 | THB56,852.50 |
10000 + | THB22.058 | THB55,145.00 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 170-2266
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPD25CN10NGATMA1
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
สถานะRoHS: ได้รับการยกเว้น
รายละเอียดสินค้า / Product Details
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 35 A |
Maximum Drain Source Voltage | 100 V |
Series | IPD25CN10N G |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 26 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 71 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 20 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 23 nC @ 10 V |
Width | 7.47mm |
Maximum Operating Temperature | +175 °C |
Length | 6.73mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.2V |
Height | 2.41mm |