Infineon IPT Type N-Channel Power Transistor, 70 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1
- RS Stock No.:
- 349-258
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPT60R037CM8XTMA1
- ผู้ผลิต:
- Infineon
มีส่วนลดเมื่อซื้อจำนวนมาก
ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย (1 แพ็ค แพ็คละ 2 ชิ้น)*
THB695.68
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB744.38
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- 2,000 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 2 - 18 | THB347.84 | THB695.68 |
| 20 - 198 | THB313.085 | THB626.17 |
| 200 + | THB288.91 | THB577.82 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 349-258
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPT60R037CM8XTMA1
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 390W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 390W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon IPT Series Power Transistor, 600V Maximum Drain Source Voltage, 70A Maximum Continuous Drain Current - IPT60R037CM8XTMA1
This power transistor is a high-voltage N-channel MOSFET designed for industrial switching and power conversion duties. It operates across a wide ambient range and is intended for surface-mounted assemblies where robust current handling and elevated voltage tolerance are required. The device is specified for industrial JEDEC applications and suits environments demanding high dissipation and dependable gate control.
Features and Benefits:
• 600V rating enables high-voltage switching applications
• 70A continuous drain current supports heavy load handling
• 37mΩ low Rds(on) reduces conduction losses
• 390W maximum power dissipation allows thermal headroom
• 79nC typical gate charge balances drive and switching speed
• ±20V gate tolerance simplifies gate-drive design
• 70A continuous drain current supports heavy load handling
• 37mΩ low Rds(on) reduces conduction losses
• 390W maximum power dissipation allows thermal headroom
• 79nC typical gate charge balances drive and switching speed
• ±20V gate tolerance simplifies gate-drive design
Applications
• Suitable for industrial motor-drive inverter stages
• Ideal for high-voltage power supplies and converters
• Used with bridge topologies in renewable-energy inverters
• Can be used for hard-switching industrial power modules
• Suitable for high-current DC-DC conversion stages
• Ideal for high-voltage power supplies and converters
• Used with bridge topologies in renewable-energy inverters
• Can be used for hard-switching industrial power modules
• Suitable for high-current DC-DC conversion stages
What temperature span can it withstand during operation?
It is specified to operate from -55°C up to 150°C, accommodating harsh thermal environments and elevated-case applications.
How is the device packaged for assembly?
It is supplied in an 8-pin PG-HSOF-8 surface-mount package intended for PCB reflow mounting and compact board layouts.
What gate and channel characteristics affect drive circuitry?
The N-channel enhancement device has a typical gate charge of 79nC and a maximum gate-to-source rating of 20V, informing gate-driver selection and protection margins.
How does the forward voltage influence switching performance?
A forward voltage of 0.9V contributes to rapid conduction turn-on behaviour and factors into overall conduction-loss calculations during device selection.
ลิงก์ที่เกี่ยวข้อง
- Infineon IPT Type N-Channel Power Transistor 650 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel Power Transistor 135 V Enhancement, 8-Pin PG-HSOF-8 IPT020N13NM6ATMA1
- Infineon IPT Type N-Channel Power Transistor 650 V Enhancement, 8-Pin PG-HSOF-8 IPT60R045CFD7XTMA1
- Infineon IPT Type N-Channel Power Transistor 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1
- Infineon IPT Type N-Channel Power MOSFET 0.82 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1
- Infineon IPT Type N-Channel Power MOSFET 0.82 V Enhancement, 8-Pin PG-HSOF-8 IPT60R022S7XTMA1
- Infineon IPT Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8