Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN, Through Hole
- RS Stock No.:
- 799-4864
- Mfr. Part No.:
- GT40WR21,Q(O
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 unit)*
THB183.88
(exc. VAT)
THB196.75
(inc. VAT)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- เพิ่มอีก 182 ชิ้นจะส่งได้หลังจากวันที่ 09 กุมภาพันธ์ 2569 ไปอีกประมาณ 7 วันทำการ
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Units | Per unit |
|---|---|
| 1 - 19 | THB183.88 |
| 20 - 49 | THB178.36 |
| 50 - 99 | THB172.85 |
| 100 - 249 | THB169.18 |
| 250 + | THB165.51 |
*price indicative
- RS Stock No.:
- 799-4864
- Mfr. Part No.:
- GT40WR21,Q(O
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 1800 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 375 W | |
| Package Type | TO-3PN | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.5 x 4.5 x 20mm | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 1800 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 375 W | ||
Package Type TO-3PN | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.5 x 4.5 x 20mm | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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