Infineon IKW50N120CS7XKSA1, N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 232-6732
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IKW50N120CS7XKSA1
ผู้ผลิต:: Infineon

Infineon IKW50N120CS7XKSA1, N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

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ยอดรวมย่อย (1 ชิ้น)*

THB302.21

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THB323.36

(รวมภาษีมูลค่าเพิ่ม)

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ชิ้น	ต่อหน่วย
1 - 9	THB302.21
10 - 19	THB294.64
20 - 29	THB287.30
30 +	THB280.12

*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 232-6732
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IKW50N120CS7XKSA1
ผู้ผลิต:: Infineon

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Infineon
	Maximum Continuous Collector Current Ic	50A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	428W
	Number of Transistors	1
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Maximum Gate Emitter Voltage VGEO	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC47/20/22
	Width	16.3mm
	Series	IKW50N120CS7
	Height	5.3mm
	Length	21.5mm
	Automotive Standard	No

	เลือกทั้งหมด
	Brand Infineon
	Maximum Continuous Collector Current Ic 50A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 428W
	Number of Transistors 1
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Maximum Gate Emitter Voltage VGEO ±20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC47/20/22
	Width 16.3mm
	Series IKW50N120CS7
	Height 5.3mm
	Length 21.5mm
	Automotive Standard No

Datasheet - IKW50N120CS7XKSA1

Infineon IKW50N120CS7 Series IGBT, 1200V Maximum Collector Emitter Voltage, 50A Max Continuous Collector Current - IKW50N120CS7XKSA1

This IGBT is a through-hole, TO-247 packaged power switching device designed for high-voltage power electronics. It functions as an N-channel transistor suitable for systems requiring high collector-emitter voltage handling and substantial continuous current capacity, operating across a wide ambient temperature range for industrial use.

Features and Benefits:

• 1200 V collector-emitter rating enables high-voltage switching
• 50 A continuous current supports heavy-load applications
• 2 V maximum Vce(sat) reduces conduction losses under load
• 428 W power dissipation allows sustained thermal loading
• ±20 V gate-emitter limit permits robust gate-drive swings
• JEDEC47/20/22 approval ensures standardised testing compliance

Applications

• Suitable for industrial motor-drive inverter stages
• Ideal for high-voltage DC-DC conversion modules
• Used with power supplies for heavy industrial equipment
• Can be used for switched-mode power conversion systems
• Suitable for laboratory high-voltage test setups

What package style and mounting method does it use?

It is supplied in a TO-247 package and designed for through-hole mounting.

What temperature range can it tolerate during operation?

It is rated to operate from −55 °C up to a maximum of 175 °C.

How many transistor elements are contained in the device?

The device comprises a single transistor element.

What are the physical height, width and length of the package?

The package measures 5.3 mm in height, 16.3 mm in width and 21.5 mm in length.

Is this component intended for automotive-standard applications?

No, it is not specified for automotive-standard use.