Infineon HEXFET Type P-Channel MOSFET, 12 A, 55 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-4858
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF9Z24NPBF
- ผู้ผลิต:
- Infineon
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
มีส่วนลดเมื่อซื้อจำนวนมาก
ยอดรวมย่อย (1 หลอด หลอดละ 50 ชิ้น)*
THB1,076.65
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB1,152.00
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- 350 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย | ต่อหลอด* |
|---|---|---|
| 50 - 50 | THB21.533 | THB1,076.65 |
| 100 - 150 | THB21.065 | THB1,053.25 |
| 200 + | THB20.597 | THB1,029.85 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 919-4858
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF9Z24NPBF
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 175mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.69 mm | |
| Height | 8.77mm | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 175mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 175°C | ||
Width 4.69 mm | ||
Height 8.77mm | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 12A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRF9Z24NPBF
This high-performance MOSFET is designed for efficient power management across various applications. With a P-channel configuration, it is well-suited for controlled switching and enhanced current flow. The product plays a crucial role in driving high-power loads, ensuring consistent performance and thermal stability under challenging conditions.
Features & Benefits
• Maximum continuous drain current of 12A
• Maximum drain-source voltage of 55V
• Low RDS(on) of 175mΩ for reduced power loss
• Works with both negative and positive gate-source voltage
Applications
• Used in power management systems for automation
• Employed in switch mode power supplies for electronics
• Beneficial in audio amplifiers for improved performance
• Common in various consumer electronics for efficient energy use
What is the typical gate charge for optimal performance?
The typical gate charge is 19nC at a gate-source voltage of 10V, providing effective switching characteristics.
How does the channel type affect functionality?
As a P-channel MOSFET, it allows for better integration in high-side switching applications, expanding potential usage scenarios in power circuits.
What is the significance of the temperature range?
The operating temperature range from -55°C to +175°C ensures reliability in various environments, making it versatile for different industrial applications.
Can it be used in high-frequency switching applications?
Yes, the combination of low gate charge and resistance makes it appropriate for high-frequency applications, enhancing performance efficiency.
What considerations should be given for installation?
Ensure proper thermal management and adequate mounting to facilitate effective heat dissipation, which can enhance longevity and reliability in operation.
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