N-Channel MOSFET, 104 A, 55 V, 3-Pin TO-220AB Infineon IRL2505PBF

RS Stock No.:: 913-3869
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRL2505PBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel MOSFET, 104 A, 55 V, 3-Pin TO-220AB Infineon IRL2505PBF

มีส่วนลดเมื่อซื้อจำนวนมาก

ราคา / Price Each (In a Tube of 50)**

THB53.981

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB57.76

(รวมภาษีมูลค่าเพิ่ม)

สามารถสั่งจองล่วงหน้าได้*

* วันที่จัดส่งอาจเปลี่ยนแปลงได้ตามจำนวนสินค้าที่คุณเลือกหรือที่อยู่จัดส่งของคุณ

ฟรี ค่าจัดส่งสำหรับการสั่งซื้อมากกว่า THB3,500.00 (ไม่รวมภาษี)

ชิ้น	ต่อหน่วย	ต่อหลอด**
50 - 50	THB53.981	THB2,699.05
100 - 150	THB52.807	THB2,640.35
200 +	THB51.634	THB2,581.70

**ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 913-3869
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRL2505PBF
ผู้ผลิต / Manufacturer:: Infineon

ล็อกอินเพื่อดูโมเดล CAD

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon LogicFET Series MOSFET, 104A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL2505PBF

This MOSFET is designed for high-performance applications that require efficient energy management. With a maximum continuous drain current of 104A and a drain-source voltage capability of up to 55V, it is a competitive option for the market. Its robust construction and advanced specifications make it suitable for various automation and electronic applications.

Features & Benefits

• Low on-resistance of 8mΩ reduces heat generation
• Maximum power dissipation of 200 W enhances performance
• Through-hole mounting style allows for easier integration
• Low gate charge requirement improves operational efficiency
• Enhancement mode design ensures performance in challenging conditions

Applications

• Power switching for effective control
• Motor driving circuits for speed and torque regulation
• Automated systems requiring high current management
• Power supplies and conversion circuits to maintain stable output
• Industrial machinery for enhanced power handling

What is the gate threshold voltage for use?

The gate threshold voltage is between 1V and 2V, providing flexibility for various applications.

How does temperature affect performance?

This device can operate effectively within a temperature range of -55°C to +175°C, making it suitable for harsh environmental conditions.

Can it handle pulsed current operations?

Yes, it can manage pulsed drain currents up to 360A, ensuring reliability during short-duration applications.

What level of voltage can be managed across the drain-source?

It supports a maximum voltage of 55V, which is ideal for most general-purpose applications.

Is specific handling required during installation?

Standard precautions should be observed, such as avoiding excessive heat during soldering and maintaining a suitable operating environment to ensure longevity.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	104 A
Maximum Drain Source Voltage	55 V
Package Type	TO-220AB
Series	LogicFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	130 nC @ 5 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Height	8.77mm
Minimum Operating Temperature	-55 °C