Infineon Single LogicFET 1 N-Channel MOSFET, 104 A, 55 V Enhancement, 3-Pin TO-220AB IRL2505PBF
- RS Stock No.:
- 913-3869
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRL2505PBF
- ผู้ผลิต:
- Infineon
ไม่พร้อมจำหน่ายในตอนนี้
เราไม่ทราบว่าสินค้านี้จะกลับมาในสต็อกหรือไม่ RS ตั้งใจที่จะลบสินค้านี้ออกจากกลุ่มผลิตภัณฑ์ในเร็วๆ นี้
- RS Stock No.:
- 913-3869
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRL2505PBF
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Transistor Configuration | Single | |
| Series | LogicFET | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 104 A | |
| Maximum Drain Source Voltage (Vds) | 55 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-220AB | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.3 V | |
| Height | 8.77 mm | |
| Length | 10.54 mm | |
| Maximum Drain Source Resistance (Rds) | 8 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -16 V, +16 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 200 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole, Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 130 nC | |
| Width | 4.69 mm | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Transistor Configuration Single | ||
Series LogicFET | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 104 A | ||
Maximum Drain Source Voltage (Vds) 55 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-220AB | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.3 V | ||
Height 8.77 mm | ||
Length 10.54 mm | ||
Maximum Drain Source Resistance (Rds) 8 mΩ | ||
Maximum Gate Source Voltage (Vgs) -16 V, +16 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 200 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole, Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 130 nC | ||
Width 4.69 mm | ||
- COO (Country of Origin):
- CN
Infineon LogicFET Series MOSFET, 104A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL2505PBF
This MOSFET is designed for high-performance applications that require efficient energy management. With a maximum continuous drain current of 104A and a drain-source voltage capability of up to 55V, it is a competitive option for the market. Its robust construction and Advanced specifications make it suitable for various automation and electronic applications.
Features & Benefits
• Low on-resistance of 8mΩ reduces heat generation
• Maximum power dissipation of 200 W enhances performance
• Through-hole mounting style allows for easier integration
• Low gate charge requirement improves operational efficiency
• Enhancement mode design ensures performance in challenging conditions
Applications
• Power switching for effective control
• Motor driving circuits for speed and torque regulation
• Automated systems requiring high current management
• Power supplies and conversion circuits to maintain stable output
• Industrial machinery for enhanced power handling
What is the gate threshold voltage for use?
The gate threshold voltage is between 1V and 2V, providing flexibility for various applications.
How does temperature affect performance?
This device can operate effectively within a temperature range of -55°C to +175°C, making it suitable for harsh environmental conditions.
Can it handle pulsed current operations?
Yes, it can manage pulsed drain currents up to 360A, ensuring reliability during short-duration applications.
What level of voltage can be managed across the drain-source?
It supports a maximum voltage of 55V, which is Ideal for most general-purpose applications.
Is specific handling required during installation?
Standard precautions should be observed, such as avoiding excessive heat during soldering and maintaining a suitable operating environment to ensure longevity.
ลิงก์ที่เกี่ยวข้อง
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IRFB4115PBF
- Microchip MSC25SMA330B4 N-Channel MOSFET 3.3 kV Enhancement TO-247 MSC025SMA330B4
- Infineon BSZ N-Channel MOSFET 60 V N, 8-Pin TSDSON BSZ037N06LS5ATMA1
- Vishay SISA10BDN N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3
- Texas Instruments NexFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin VSON CSD25404Q3T
- Texas Instruments NexFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin VSON
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK 1212-8SH SISH521EDN-T1-GE3
- Infineon CoolSiC N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-247 IMW40R011M2HXKSA1
