N-Channel MOSFET, 162 A, 40 V, 3-Pin I2PAK Infineon IRF1404LPBF

RS Stock No.:: 913-3815
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF1404LPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel MOSFET, 162 A, 40 V, 3-Pin I2PAK Infineon IRF1404LPBF

มีส่วนลดเมื่อซื้อจำนวนมาก

ราคา / Price Each (In a Tube of 50)**

THB76.01

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB81.33

(รวมภาษีมูลค่าเพิ่ม)

สามารถสั่งจองล่วงหน้าได้*

* วันที่จัดส่งอาจเปลี่ยนแปลงได้ตามจำนวนสินค้าที่คุณเลือกหรือที่อยู่จัดส่งของคุณ

ฟรี ค่าจัดส่งสำหรับการสั่งซื้อมากกว่า THB3,500.00 (ไม่รวมภาษี)

ชิ้น	ต่อหน่วย	ต่อหลอด**
50 - 50	THB76.01	THB3,800.50
100 - 150	THB74.357	THB3,717.85
200 +	THB72.704	THB3,635.20

**ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 913-3815
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF1404LPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 162A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF1404LPBF

This MOSFET provides an efficient solution in various electronic applications, particularly where high performance is essential. Its advanced processing techniques make it suitable for automation and electronic control systems, contributing to modern power management devices.

Features & Benefits

• Delivers a continuous drain current of 162A for robust performance
• Withstands a maximum drain-source voltage of 40V for safe operation
• Exhibits low on-resistance (RDS(on)) of 4 mΩ, enhancing energy efficiency
• Utilises enhancement mode technology for improved switching performance
• Supports through-hole mounting, facilitating integration into existing designs

Applications

• Used in high current circuits for power regulation
• Suitable for power supply designs in industrial automation
• Applied in electric motor drives and control systems
• Ideal for DC-DC converters in renewable energy systems

What is the maximum power dissipation capability?

It can handle power dissipation up to 3.8W under specific conditions, ensuring optimal performance without overheating during operation.

Is it compatible with surface mount designs?

While primarily in the I2PAK package for through-hole applications, it can be integrated into other industrial designs requiring robust components.

How should it be mounted for optimal performance?

Follow proper through-hole mounting techniques to ensure secure soldering, preventing thermal and mechanical failures during operation.

What are the implications of exceeding the specified limits?

Exceeding the continuous drain current or voltage limits may cause thermal overload or permanent damage to the device, affecting overall system reliability.

Can this component be reused after installation?

Reinstallation is possible if careful removal techniques are employed, though repeated thermal cycling may impact long-term reliability.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	162 A
Maximum Drain Source Voltage	40 V
Package Type	I2PAK (TO-262)
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	3.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	160 nC @ 10 V
Maximum Operating Temperature	+175 °C
Height	10.54mm
Minimum Operating Temperature	-55 °C