N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK Infineon IRF640NSTRLPBF

RS Stock No.:: 831-2853
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF640NSTRLPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK Infineon IRF640NSTRLPBF

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

มีส่วนลดเมื่อซื้อจำนวนมาก

ราคา / Price Each: (In a Pack of 10)**

THB42.902

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB45.905

(รวมภาษีมูลค่าเพิ่ม)

160 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)*

* วันที่จัดส่งอาจเปลี่ยนแปลงได้ตามจำนวนสินค้าที่คุณเลือกหรือที่อยู่จัดส่งของคุณ

ฟรี ค่าจัดส่งสำหรับการสั่งซื้อมากกว่า THB3,500.00 (ไม่รวมภาษี)

ชิ้น	ต่อหน่วย	ต่อแพ็ค**
10 - 190	THB42.902	THB429.02
200 - 390	THB41.829	THB418.29
400 +	THB41.185	THB411.85

**ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 831-2853
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF640NSTRLPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NSTRLPBF

This MOSFET is essential for efficient power management across various applications, controlling electrical current flow in circuits to ensure performance and reliability. Its robust specifications make it particularly suitable for automation and electronic systems in contemporary electronics.

Features & Benefits

• N-channel configuration supports enhancement mode operation
• Maximum continuous drain current of 18A
• Peak drain-source voltage of 200V for diverse applications
• D2PAK package designed for surface mount convenience
• Low Rds(on) of 150mΩ reduces energy loss during operation
• High maximum operating temperature of +175°C for various environments

Applications

• Power management in automotive electronics
• Industrial power supplies for automation systems
• Motor control across different sectors
• Renewable energy systems for energy conversion
• High-frequency power inverter designs

What is the maximum drain-source voltage?

The maximum drain-source voltage rating is 200V, providing flexibility for high-voltage applications.

How is heat dissipation managed during operation?

This MOSFET offers a power dissipation capability of 150W, and its package design promotes effective heat management under high loads.

What are the implications of the gate threshold voltage range?

With a maximum gate threshold voltage of 4V and a minimum of 2V, it offers engineers a versatile range for switching applications.

Can this component be used in parallel configurations?

Yes, it can be easily paralleled due to its low on-resistance, making it suitable for high current applications.

How should it be soldered for optimal performance?

The soldering temperature should not exceed 300°C for 10 seconds to ensure proper installation without damaging the MOSFET.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	150 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	10.67mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	67 nC @ 10 V
Width	9.65mm
Transistor Material	Si
Height	4.83mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.3V