Infineon HEXFET Type N-Channel MOSFET, 39 A, 80 V Enhancement, 3-Pin TO-252 IRLR2908TRPBF

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ตัวเลือกบรรจุภัณฑ์ / Packaging Options :
RS Stock No.:
830-3354
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
IRLR2908TRPBF
ผู้ผลิต:
Infineon
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เลือกทั้งหมด

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

39A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

22nC

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

120W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

6.22 mm

Height

2.39mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MX

Infineon HEXFET Series MOSFET, 39A Maximum Continuous Drain Current, 120W Maximum Power Dissipation - IRLR2908TRPBF


This MOSFET is designed for versatility and efficiency across various applications that demand precise current control, particularly in space-constrained environments. Thanks to its HEXFET technology, it maintains effective performance at high temperatures, making it a suitable option for contemporary electronic and electrical systems. Its Ability to manage significant power dissipation while operating in challenging conditions adds to its relevance.

Features & Benefits


• Continuous drain current capability of up to 39A for demanding load applications

• Maximum drain-source voltage of 80V for enhanced reliability

• Low on-resistance of 30mΩ for improved energy efficiency

• Operates at high temperatures up to +175°C for rigorous environments

• Surface mount design facilitates easy installation and assembly

• Enhancement mode offers improved control for varied circuitry

Applications


• Employed in power supply circuits for effective switching

• Suitable for motor control requiring accurate current regulation

• Utilised within automotive systems for efficient power management

• Ideal for high-frequency switching circuits to enhance efficiency

• Adopted in industrial automation systems for superior performance

What are the thermal characteristics of this component?


The thermal resistance junction-to-case is approximately 1.3°C/W, which supports effective heat dissipation during operation, essential for maintaining optimal performance and reliability.

How do I ensure proper installation for optimal performance?


It is important to adhere to suitable PCB design guidelines, particularly focusing on minimising inductance and maximising thermal contact with the substrate to prevent overheating during operation.

Can it handle pulsed currents effectively?


Yes, it can support pulsed drain currents up to 150A, enabling management of transient conditions without compromising the device's integrity.

What is the significance of the RDS(on) Value in operations?


The low RDS(on) Value of 30mΩ is important as it reduces power losses during switching, enhancing overall circuit efficiency and performance.

How does the gate threshold voltage affect functionality?


With a threshold voltage between 1V and 2.5V, it allows for precise control, making it suitable for various electronic applications requiring accurate switching.

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