Infineon HEXFET Type N-Channel MOSFET, 44 A, 55 V Enhancement, 3-Pin TO-252 IRFR1205TRPBF

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ตัวเลือกบรรจุภัณฑ์ / Packaging Options :
RS Stock No.:
827-4026
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
IRFR1205TRPBF
ผู้ผลิต:
Infineon
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เลือกทั้งหมด

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

44A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

65nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

107W

Maximum Operating Temperature

175°C

Height

2.39mm

Length

6.73mm

Standards/Approvals

No

Width

6.22 mm

Distrelec Product Id

304-44-461

Automotive Standard

No

Infineon HEXFET Series MOSFET, 44A Maximum Continuous Drain Current, 107W Maximum Power Dissipation - IRFR1205TRPBF


This high-performance N-channel MOSFET is designed for efficient power management in a variety of applications. It features a maximum continuous drain current of 44A and a maximum drain-source voltage of 55V, making it suitable for professionals in the electronics and automation sectors. The enhancement mode configuration enhances switching efficiency, thereby improving circuit performance.

Features & Benefits


• Low drain-source resistance minimises power loss

• Handles power dissipation up to 107W

• High maximum operating temperature of 175°C for broad applicability

• Optimised gate charge for improved switching efficiency

• Surface-mount design simplifies integration into Compact circuits

• Lead-free construction complies with contemporary environmental standards

Applications


• Utilised in power converters to improve efficiency

• Employed in motor control circuits for precise functionality

• Ideal for switching regulators to manage voltage

• Suitable for renewable energy systems

• Appropriate for Compact portable electronics

What is the significance of the low on-resistance in this model?


The low on-resistance reduces heat generation during operation, enhancing efficiency and reliability in high-current applications.

How does the enhancement mode configuration benefit circuit design?


The enhancement mode provides better control over switching characteristics, ensuring smooth operation and optimal performance in various electronic applications.

Can this component operate in extreme temperatures?


Yes, it is rated for use in environments from -55°C to +175°C, making it appropriate for various industrial applications.

What are the electrical implications of the gate-source voltage limits?


The gate-source voltage limits ensure safe operation and prevent damage, allowing design flexibility without sacrificing reliability.

How can effective heat dissipation be achieved when using this component?


Incorporating adequate heatsinking or ventilation will facilitate effective heat dissipation, ensuring stable performance during prolonged operation periods.

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