N-Channel MOSFET, 350 mA, 240 V, 3-Pin SOT-223 Infineon BSP89H6327XTSA1

RS Stock No.:: 445-2281
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: BSP89H6327XTSA1
ผู้ผลิต / Manufacturer:: Infineon

N-Channel MOSFET, 350 mA, 240 V, 3-Pin SOT-223 Infineon BSP89H6327XTSA1

มีส่วนลดเมื่อซื้อจำนวนมาก

ราคา / Price Each: (In a Pack of 5)**

THB19.522

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB20.889

(รวมภาษีมูลค่าเพิ่ม)

465 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)*

* วันที่จัดส่งอาจเปลี่ยนแปลงได้ตามจำนวนสินค้าที่คุณเลือกหรือที่อยู่จัดส่งของคุณ

ฟรี ค่าจัดส่งสำหรับการสั่งซื้อมากกว่า THB3,500.00 (ไม่รวมภาษี)

ชิ้น	ต่อหน่วย	ต่อแพ็ค**
5 - 20	THB19.522	THB97.61
25 - 95	THB18.936	THB94.68
100 - 245	THB18.348	THB91.74
250 - 495	THB17.956	THB89.78
500 +	THB17.564	THB87.82

**ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 445-2281
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: BSP89H6327XTSA1
ผู้ผลิต / Manufacturer:: Infineon

Infineon SIPMOS® N-Channel MOSFETs

Infineon SIPMOS® Series MOSFET, 350 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP89H6327XTSA1

This MOSFET is a key component for high-voltage electronic applications, providing effective switching capabilities. Utilising N-channel enhancement mode technology, it is suitable for automotive and industrial electronics, ensuring efficient operation in various conditions. The SOT-223 package enables versatile surface mounting, making it appropriate for contemporary circuit designs.

Features & Benefits

• Maximum continuous drain current of 350mA
• High drain-source voltage rating of 240V for enhanced safety
• Low gate threshold voltage improves sensitivity
• Power dissipation capability of up to 1.8W
• Ideal for logic-level applications with quick switching times

Applications

• Power management in automotive electronics
• MOSFET-based switching power supplies
• Signal amplification in electronic circuits

What is the maximum temperature range for operation?

It operates effectively within a temperature range of -55°C to +150°C, suitable for various environmental conditions.

How does the gate threshold voltage affect performance?

A low gate threshold voltage allows the MOSFET to activate at lower input voltages, enhancing efficiency in battery-operated devices.

What type of mounting is compatible with this device?

This component is designed for surface mounting in a SOT-223 package, facilitating easy integration into PCBs.

Can it handle pulsed drain currents?

Yes, it can manage pulsed drain currents of up to 1.4A, offering additional flexibility for burst power applications.

Is it suitable for use with microcontrollers?

Yes, its logic-level compatibility allows for direct interfacing with microcontroller outputs for effective control.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	350 mA
Maximum Drain Source Voltage	240 V
Package Type	SOT-223
Series	SIPMOS®
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	6 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.8V
Minimum Gate Threshold Voltage	0.8V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	3.5mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	6.5mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	4.3 nC @ 10 V
Height	1.6mm
Minimum Operating Temperature	-55 °C
Automotive Standard	AEC-Q101
Forward Diode Voltage	1.2V