Infineon BSP Type P-Channel MOSFET, 680 mA, -100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1
- RS Stock No.:
- 250-0536
- Distrelec หมายเลขบทความ:
- 304-40-496
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSP316PH6327XTSA1
- ผู้ผลิต:
- Infineon
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THB156.33
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB167.27
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
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ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 5 - 5 | THB31.266 | THB156.33 |
| 10 - 95 | THB28.124 | THB140.62 |
| 100 - 245 | THB25.326 | THB126.63 |
| 250 - 495 | THB22.80 | THB114.00 |
| 500 + | THB20.482 | THB102.41 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 250-0536
- Distrelec หมายเลขบทความ:
- 304-40-496
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSP316PH6327XTSA1
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | -100V | |
| Package Type | SOT-223 | |
| Series | BSP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1800mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds -100V | ||
Package Type SOT-223 | ||
Series BSP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1800mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSP Series MOSFET, 100V Maximum Drain‑Source Voltage, +150°C Maximum Operating Temperature - BSP316PH6327XTSA1
This p‑channel MOSFET is a surface‑mount transistor designed for power switching in temperature‑demanding environments. It operates across a wide thermal range and is intended for applications requiring controlled drain‑source conduction with moderate continuous current capability. The component meets automotive screening and environmental restrictions for use where standards compliance is required.
Features and Benefits:
• 1800mΩ Rds(on) reduces conduction losses and simplifies thermal design
• 0.68A continuous drain current supports low‑to‑moderate load switching
• 80nC typical gate charge enables Faster gate transitions with lower drive energy
• 81W power dissipation allows sustained energy handling in constrained packages
• +150°C maximum operating temperature permits use in high‑temperature assemblies
• 0.68A continuous drain current supports low‑to‑moderate load switching
• 80nC typical gate charge enables Faster gate transitions with lower drive energy
• 81W power dissipation allows sustained energy handling in constrained packages
• +150°C maximum operating temperature permits use in high‑temperature assemblies
Applications
• Suitable for automotive subsystem power management
• Ideal for surface‑mount regulator and load‑switch circuits
• Used with battery management and low‑current switching modules
• Can be used for thermal‑tolerant power‑path control on Compact boards
• Suitable for designs requiring RoHS‑compliant P‑channel components
• Ideal for surface‑mount regulator and load‑switch circuits
• Used with battery management and low‑current switching modules
• Can be used for thermal‑tolerant power‑path control on Compact boards
• Suitable for designs requiring RoHS‑compliant P‑channel components
What gate voltage limits must be observed during operation?
The device accepts up to 20V between gate and source and should not exceed that value.
What package and mounting style does it use for PCB integration?
It is supplied in a SOT‑223 package intended for surface mounting to aid thermal coupling.
What electrothermal behaviour applies for sustained dissipation?
The part is rated to dissipate up to 81W under specified conditions but requires appropriate PCB thermal management.
Is the device qualified for automotive environments?
It complies with AEC‑Q101 standards for automotive‑grade semiconductor screening.
What environmental restriction standard does it meet?
The component is RoHS compliant, meeting lead‑free and restricted‑substance requirements.
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